Win Source Part Number: 1277604-SISS92DN-T1-
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 12.3A (Tc)
Rds On (Max) @ Id, Vgs: 173mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 125 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 53 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SISS92DN-T1-GE3TR,SI
Base Product Number: SISS92
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
MOSFET N-CH 250V 3.4A/12.3A PPAK
N-Channel 250V 3.4A (Ta), 12.3A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S
N-Channel 250V 3.4A (Ta), 12.3A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S
N-Channel 250V 3.4A (Ta), 12.3A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S
MOSFET, N-CH, 250V, 12.3A, 150DEG C; Transistor Polarity:N Channel; Continuous Drain Current Id:12.3A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.14ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET 250V Vds; +/-20V Vgs PowerPAK 1212-8S
MOSFET N-CH 250V 3.4A/12.3A PPAK
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1277604-SISS92DN-T1-GE3 | SISS92DN-T1-GE3 | SISS92DN-T1-GE3TR-ND | 99AC2832 | SISS92DN-T1-GE3 | SISS92DN-T1-GE3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, N-Ch, 250V, 12.3A, 150Deg C; Transistor Polarity Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Package Type | SOT3 | PowerPAK® 1212-8S | PowerPAK® 1212-8S | TO-3 | PowerPAKR 1212-8S | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 250 volts | |||||
| IDSS | 3400 milliamps | 12300 milliamps |
