The Vishay N-Channel MOSFET, part number 04AJ4578, features a maximum drain-source voltage of 125V and a continuous drain current rating of 31A. It has a maximum on-resistance (R_DS(on)) of 0.0298 ohms at a gate-source voltage (V_GS) of 10V. The device is designed for high-temperature applications, with a maximum junction temperature of 150¬8C and a maximum power dissipation of 65.8W. It is suitable for various applications including primary side switching, synchronous rectification, DC/DC converters, motor drive control, and load switching. The MOSFET is packaged in a PowerPAK 1212-8S configuration and is compliant with RoHS standards.
Trans MOSFET N-CH 125V 8.5A 8-Pin PowerPAK 1212 EP T/R Product overview: SISS70DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 125V, 8.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 125V, 8.5A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SISS70DN-T1-GE3 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1277602-SISS70DN-T1-
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 125 V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 31A (Tc)
Rds On (Max) @ Id, Vgs: 29.8mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 5.1W (Ta), 65.8W (Tc)
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 62.5 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 67 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SISS70DN-T1-GE3CT,SI
Base Product Number: SISS70
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 125V 8.5A (Ta), 31A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S
N-Channel 125V 8.5A (Ta), 31A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S
N-Channel 125V 8.5A (Ta), 31A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S
MOSFET 125V Vds 20V Vgs PowerPAK 1212-8S
MOSFET N-CH 125V 8.5A/31A PPAK
MOSFET N-CH 125V 8.5A/31A PPAK
MOSFET, N-CH, 125V, 31A, 150DEG C, 65.8W; Transistor Polarity:N Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:125V; On Resistance Rds(on):0.0248ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; PowerRoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SISS70DN-T1-GE3 | 1277602-SISS70DN-T1-GE3 | SISS70DN-T1-GE3TR-ND | SISS70DN-T1-GE3 | SISS70DN-T1-GE3 | SISS70DN-T1-GE3 | 04AJ4578 |
| Product Name | 125V 8.5A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 125V, 31A, 150Deg C, 65.8W; Transistor Polarity Vishay |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 125 volts | 125 volts | |||||
| Transconductance | 0.0160 kS | ||||||
| PD | 65.8 milliwatts | 5100 milliwatts |
