Manufacturer: Vishay
Win Source Part Number: 849560-SISS67DN-T1-G
Series: TrenchFET® Gen III
Features: 30 V
Package: Reel - TR
Family Name: SISS67
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
HTSUS: 8541.29.0095
Other Part Number: SISS67DN-T1-GE3CT, SISS67DN-T1-GE3TR, SISS67DN-T1-GE3DKR
Trans MOSFET P-CH 30V 60A 8-Pin PowerPAK 1212-S EP T/R Product overview: SISS67DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SISS67DN-T1-GE3 can be used for catalog matching and distributor lookup.
P-Channel 30V 60A (Tc) 65.8W (Tc) Surface Mount PowerPAK® 1212-8S
P-Channel 30V 60A (Tc) 65.8W (Tc) Surface Mount PowerPAK® 1212-8S
P-Channel 30V 60A (Tc) 65.8W (Tc) Surface Mount PowerPAK® 1212-8S
MOSFET P-CH 30V 60A PPAK1212-8S
MOSFET P-CH 30V 60A PPAK1212-8S
MOSFET, P-CH, -30V, -60A, 150DEG C; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; Power RoHS Compliant: Yes
MOSFET -30V Vds 25V Vgs PowerPAK 1212-8S
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 849560-SISS67DN-T1-GE3 | 278-SISS67DN-T1-GE3 | SISS67DN-T1-GE3TR-ND | SISS67DN-T1-GE3 | SISS67DN-T1-GE3 | 78AC6533 | SISS67DN-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SISS67DN-T1-GE3 | 30V 60A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs | Mosfet, P-Ch, -30V, -60A, 150Deg C; Transistor Polarity Vishay | MOSFET |
| Package Type | SOT3 | Tape and Reel | PowerPAK® 1212-8S | PowerPAKR 1212-8S | PowerPAK® 1212-8S | TO-3 | |
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 30 volts | 30 volts | |||||
| PD | 5000 milliwatts | 65800 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
