Vishay Precision Group Single FETs, MOSFETs SISS66DN-T1-GE3

N-Channel 30V 49.1A (Ta), 178.3A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S

N-Channel 30V 49.1A (Ta), 178.3A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S

N-Channel 30V 49.1A (Ta), 178.3A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S

N-Channel 30 V MOSFET with Schottky

N-Channel 30 V MOSFET with Schottky

N-Channel 30 V MOSFET with Schottky

MOSFET N-CH 30V 49.1/178.3A PPAK Product overview: SISS66DN-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 178.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 178.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SISS66DN-T1-GE3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Win Source Part Number: 895130-SISS66DN-T1-GE3
Series: TrenchFET® Gen IV
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 30 V 49.1A (Ta), 178.3A (Tc) 5.1W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S
Package: PowerPAK® 1212-8S
Package: Reel - TR
Mounting: Surface Mount
Family Name: SISS66
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® 1212-8S
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
HTSUS: 8541.29.0095
Other Part Number: SISS66DN-T1-GE3TR, SISS66DN-T1-GE3CT, SISS66DN-T1-GE3DKR