Vishay Precision Group Single FETs, MOSFETs SISS64DN-T1-GE3

Description
N-Channel 30V 40A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S
Request a Quote Datasheet
Description
N-Channel 30V 40A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SISS64DN-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISS64DN-T1-GE3CT-ND
Single FETs, MOSFETs SISS64DN-T1-GE3CT-ND
N-Channel 30V 40A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S

N-Channel 30V 40A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S

Buy Now Datasheet
Single FETs, MOSFETs - SISS64DN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISS64DN-T1-GE3TR-ND
Single FETs, MOSFETs SISS64DN-T1-GE3TR-ND
N-Channel 30V 40A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S

N-Channel 30V 40A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S

Buy Now Datasheet
Single FETs, MOSFETs - SISS64DN-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISS64DN-T1-GE3DKR-ND
Single FETs, MOSFETs SISS64DN-T1-GE3DKR-ND
N-Channel 30V 40A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S

N-Channel 30V 40A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1093135-SISS64DN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1093135-SISS64DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1093135-SISS64DN-T1-GE3
Win Source Part Number: 1093135-SISS64DN-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen IV Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 57W (Tc) Package / Case: PowerPAK® 1212-8S Supplier Device Package: PowerPAK® 1212-8S Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 15 V Vgs (Max): +20V, -16V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 68 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SISS64DN-T1-GE3CT,SI SS64DN-T1-GE3TR,SISS 64DN-T1-GE3DKR Base Product Number: SISS64 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1093135-SISS64DN-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 57W (Tc)
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 15 V
Vgs (Max): +20V, -16V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 68 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SISS64DN-T1-GE3CT,SISS64DN-T1-GE3TR,SISS64DN-T1-GE3DKR
Base Product Number: SISS64
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SISS64DN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SISS64DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SISS64DN-T1-GE3
MOSFET N-CH 30V 40A PPAK1212-8S

MOSFET N-CH 30V 40A PPAK1212-8S

Supplier's Site
Mosfet, N-Ch, 30V, 40A, 150Deg C, 57W; Transistor Polarity Vishay - 81AC2797 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 40A, 150Deg C, 57W; Transistor Polarity Vishay
81AC2797
Mosfet, N-Ch, 30V, 40A, 150Deg C, 57W; Transistor Polarity Vishay 81AC2797
MOSFET, N-CH, 30V, 40A, 150DEG C, 57W; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power RoHS Compliant: Yes

MOSFET, N-CH, 30V, 40A, 150DEG C, 57W; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 30V Vds 20V Vgs PowerPAK 1212-8S

MOSFET 30V Vds 20V Vgs PowerPAK 1212-8S

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SISS64DN-T1-GE3CT-ND 1093135-SISS64DN-T1-GE3 SISS64DN-T1-GE3 81AC2797 SISS64DN-T1-GE3
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 30V, 40A, 150Deg C, 57W; Transistor Polarity Vishay MOSFET
Polarity N-Channel N-Channel
Package Type PowerPAK® 1212-8S SOT3 PowerPAKR 1212-8S TO-3
PD 57000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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