Power Field-Effect Transistor, Product overview: SISS63DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SISS63DN-T1-GE3 can be used for catalog matching and distributor lookup.
P-Channel 20V 35.1A (Ta), 127.5A (Tc) 5W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S
P-Channel 20V 35.1A (Ta), 127.5A (Tc) 5W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S
P-Channel 20V 35.1A (Ta), 127.5A (Tc) 5W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S
MOSFET P-CH 20V 35.1/127.5A PPAK
Win Source Part Number: 1093134-SISS63DN-T1-
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET® Gen III
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 35.1A (Ta), 127.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 65.8W (Tc)
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 7080 pF @ 10 V
Vgs (Max): ±12V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 70 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SISS63DN-T1-GE3C
Base Product Number: SISS63
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
MOSFET, P-CH, -20V, -127.5A, 150DEG C ROHS COMPLIANT: YES
MOSFET P-CH 20V 35.1/127.5A PPAK
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SISS63DN-T1-GE3 | 742-SISS63DN-T1-GE3TR-ND | SISS63DN-T1-GE3 | 1093134-SISS63DN-T1-GE3 | 42AH1979 | SISS63DN-T1-GE3 |
| Product Name | MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet, P-Ch, -20V, -127.5A, 150Deg C Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | |||
| Package Type | PowerPAK® 1212-8S | PowerPAK® 1212-8S | SOT3 | TO-3 | PowerPAKR 1212-8S | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 20 volts |
