Win Source Part Number: 1277675-SISS61DN-T1-
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET® Gen III
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 111.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 5W (Ta), 65.8W (Tc)
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8740 pF @ 10 V
Vgs (Max): ±8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 80 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SISS61DN-T1-GE3CT,SI
Base Product Number: SISS61
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
P-Channel 20V 30.9A (Ta), 111.9A (Tc) 5W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S
P-Channel 20V 30.9A (Ta), 111.9A (Tc) 5W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S
P-Channel 20V 30.9A (Ta), 111.9A (Tc) 5W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S
Power Field-Effect Transistor, Product overview: SISS61DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SISS61DN-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET P-CH 20V 30.9/111.9A PPAK
MOSFET Pch 20V Vds 8V Vgs PowerPAK 1212-8S
MOSFET P-CH 20V 30.9/111.9A PPAK
MOSFET, P-CH, -20V, -111.9A, 150DEG C; Transistor Polarity:P Channel; Continuous Drain Current Id:-111.9A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0029ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-900mV; RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1277675-SISS61DN-T1-GE3 | SISS61DN-T1-GE3DKR-ND | 278-SISS61DN-T1-GE3 | SISS61DN-T1-GE3 | SISS61DN-T1-GE3 | SISS61DN-T1-GE3 | 02AH2522 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, -20V, -111.9A, 150Deg C; Transistor Polarity Vishay |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | ||||
| Package Type | SOT3 | PowerPAK® 1212-8S | PowerPAK® 1212-8S | PowerPAKR 1212-8S | TO-3 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 20 volts | ||||||
| IDSS | 30900 milliamps | -111900 milliamps |
