Vishay Precision Group Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SISS61DN-T1-GE3

Description
Win Source Part Number: 1277675-SISS61DN-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen III Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 111.9A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 5W (Ta), 65.8W (Tc) Package / Case: PowerPAK® 1212-8S Supplier Device Package: PowerPAK® 1212-8S Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8740 pF @ 10 V Vgs (Max): ±8V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 80 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SISS61DN-T1-GE3CT,SI SS61DN-T1-GE3DKR,SIS S61DN-T1-GE3TR Base Product Number: SISS61 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Request a Quote Datasheet
Description
Win Source Part Number: 1277675-SISS61DN-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen III Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 111.9A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 5W (Ta), 65.8W (Tc) Package / Case: PowerPAK® 1212-8S Supplier Device Package: PowerPAK® 1212-8S Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8740 pF @ 10 V Vgs (Max): ±8V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 80 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SISS61DN-T1-GE3CT,SI SS61DN-T1-GE3DKR,SIS S61DN-T1-GE3TR Base Product Number: SISS61 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277675-SISS61DN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277675-SISS61DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277675-SISS61DN-T1-GE3
Win Source Part Number: 1277675-SISS61DN-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen III Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 111.9A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 5W (Ta), 65.8W (Tc) Package / Case: PowerPAK® 1212-8S Supplier Device Package: PowerPAK® 1212-8S Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8740 pF @ 10 V Vgs (Max): ±8V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 80 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SISS61DN-T1-GE3CT,SI SS61DN-T1-GE3DKR,SIS S61DN-T1-GE3TR Base Product Number: SISS61 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V

Win Source Part Number: 1277675-SISS61DN-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET® Gen III
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 111.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 5W (Ta), 65.8W (Tc)
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8740 pF @ 10 V
Vgs (Max): ±8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 80 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SISS61DN-T1-GE3CT,SISS61DN-T1-GE3DKR,SISS61DN-T1-GE3TR
Base Product Number: SISS61
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V

Buy Now Datasheet
Single FETs, MOSFETs - SISS61DN-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISS61DN-T1-GE3DKR-ND
Single FETs, MOSFETs SISS61DN-T1-GE3DKR-ND
P-Channel 20V 30.9A (Ta), 111.9A (Tc) 5W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S

P-Channel 20V 30.9A (Ta), 111.9A (Tc) 5W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S

Buy Now Datasheet
Single FETs, MOSFETs - SISS61DN-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISS61DN-T1-GE3CT-ND
Single FETs, MOSFETs SISS61DN-T1-GE3CT-ND
P-Channel 20V 30.9A (Ta), 111.9A (Tc) 5W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S

P-Channel 20V 30.9A (Ta), 111.9A (Tc) 5W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S

Buy Now Datasheet
Single FETs, MOSFETs - SISS61DN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISS61DN-T1-GE3TR-ND
Single FETs, MOSFETs SISS61DN-T1-GE3TR-ND
P-Channel 20V 30.9A (Ta), 111.9A (Tc) 5W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S

P-Channel 20V 30.9A (Ta), 111.9A (Tc) 5W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S

Buy Now Datasheet
Single FETs, MOSFETs - SISS61DN-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SISS61DN-T1-GE3
Single FETs, MOSFETs SISS61DN-T1-GE3
MOSFET P-CH 20V 30.9/111.9A PPAK

MOSFET P-CH 20V 30.9/111.9A PPAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SISS61DN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SISS61DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SISS61DN-T1-GE3
MOSFET P-CH 20V 30.9/111.9A PPAK

MOSFET P-CH 20V 30.9/111.9A PPAK

Supplier's Site
Mosfet, P-Ch, -20V, -111.9A, 150Deg C; Transistor Polarity Vishay - 02AH2522 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -20V, -111.9A, 150Deg C; Transistor Polarity Vishay
02AH2522
Mosfet, P-Ch, -20V, -111.9A, 150Deg C; Transistor Polarity Vishay 02AH2522
MOSFET, P-CH, -20V, -111.9A, 150DEG C; Transistor Polarity:P Channel; Continuous Drain Current Id:-111.9A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0029ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-900mV; RoHS Compliant: Yes

MOSFET, P-CH, -20V, -111.9A, 150DEG C; Transistor Polarity:P Channel; Continuous Drain Current Id:-111.9A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0029ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-900mV; RoHS Compliant: Yes

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET Pch 20V Vds 8V Vgs PowerPAK 1212-8S

MOSFET Pch 20V Vds 8V Vgs PowerPAK 1212-8S

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1277675-SISS61DN-T1-GE3 SISS61DN-T1-GE3DKR-ND SISS61DN-T1-GE3 SISS61DN-T1-GE3 02AH2522 SISS61DN-T1-GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, P-Ch, -20V, -111.9A, 150Deg C; Transistor Polarity Vishay MOSFET
Polarity P-Channel P-Channel P-Channel; P-Channel
Package Type SOT3 PowerPAK® 1212-8S PowerPAK® 1212-8S PowerPAKR 1212-8S TO-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 20 volts
IDSS 30900 milliamps -111900 milliamps
Unlock Full Specs
to access all available technical data