MOSFET P-CH 20V 30.9/111.9A PPAK
P-Channel 20V 30.9A (Ta), 111.9A (Tc) 5W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S
P-Channel 20V 30.9A (Ta), 111.9A (Tc) 5W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S
P-Channel 20V 30.9A (Ta), 111.9A (Tc) 5W (Ta), 65.8W (Tc) Surface Mount PowerPAK® 1212-8S
Win Source Part Number: 1277675-SISS61DN-T1-
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET® Gen III
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 111.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 5W (Ta), 65.8W (Tc)
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8740 pF @ 10 V
Vgs (Max): ±8V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 80 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SISS61DN-T1-GE3CT,SI
Base Product Number: SISS61
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
MOSFET P-CH 20V 30.9/111.9A PPAK
MOSFET Pch 20V Vds 8V Vgs PowerPAK 1212-8S
MOSFET, P-CH, -20V, -111.9A, 150DEG C; Transistor Polarity:P Channel; Continuous Drain Current Id:-111.9A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0029ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-900mV; RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SISS61DN-T1-GE3 | SISS61DN-T1-GE3DKR-ND | 1277675-SISS61DN-T1-GE3 | SISS61DN-T1-GE3 | SISS61DN-T1-GE3 | 02AH2522 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, P-Ch, -20V, -111.9A, 150Deg C; Transistor Polarity Vishay |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 20 volts | |||||
| IDSS | 30900 milliamps | -111900 milliamps | ||||
| PD | 5000 milliwatts |
