Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SISS46DN-T1-GE3 SISS46DN-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 933847-SISS46DN-T1-G E3 Series: TrenchFET® Gen IV Operating Temperature Range: -55°C ~ 150°C (TJ) Features: N-Channel 100 V 12.5A (Ta), 45.3A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S Package: PowerPAK® 1212-8S Package: Reel - TR Mounting: Surface Mount Family Name: SISS46 Categories: Discrete Semiconductor Products Case / Package: PowerPAK® 1212-8S ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance Quantity per package: 3000 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 46 Weeks HTSUS: 8541.29.0095 Other Part Number: SISS46DN-T1-GE3TR, SISS46DN-T1-GE3CT, SISS46DN-T1-GE3DKR
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SISS46DN-T1-GE3 - 933847-SISS46DN-T1-GE3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SISS46DN-T1-GE3TR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - SISS46DN-T1-GE3DKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - SISS46DN-T1-GE3CT-ND - DigiKey
    DigiKey
  • Mosfet, N-Ch, 100V, 45.3A, 150Deg C; Transistor Polarity Vishay - 99AC9592 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SISS46DN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 933847-SISS46DN-T1-G E3 Series: TrenchFET® Gen IV Operating Temperature Range: -55°C ~ 150°C (TJ) Features: N-Channel 100 V 12.5A (Ta), 45.3A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S Package: PowerPAK® 1212-8S Package: Reel - TR Mounting: Surface Mount Family Name: SISS46 Categories: Discrete Semiconductor Products Case / Package: PowerPAK® 1212-8S ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance Quantity per package: 3000 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 46 Weeks HTSUS: 8541.29.0095 Other Part Number: SISS46DN-T1-GE3TR, SISS46DN-T1-GE3CT, SISS46DN-T1-GE3DKR
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SISS46DN-T1-GE3 - 933847-SISS46DN-T1-GE3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SISS46DN-T1-GE3
933847-SISS46DN-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SISS46DN-T1-GE3 933847-SISS46DN-T1-GE3
Manufacturer: Vishay Win Source Part Number: 933847-SISS46DN-T1-G E3 Series: TrenchFET® Gen IV Operating Temperature Range: -55°C ~ 150°C (TJ) Features: N-Channel 100 V 12.5A (Ta), 45.3A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S Package: PowerPAK® 1212-8S Package: Reel - TR Mounting: Surface Mount Family Name: SISS46 Categories: Discrete Semiconductor Products Case / Package: PowerPAK® 1212-8S ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance Quantity per package: 3000 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 46 Weeks HTSUS: 8541.29.0095 Other Part Number: SISS46DN-T1-GE3TR, SISS46DN-T1-GE3CT, SISS46DN-T1-GE3DKR

Manufacturer: Vishay
Win Source Part Number: 933847-SISS46DN-T1-GE3
Series: TrenchFET® Gen IV
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 100 V 12.5A (Ta), 45.3A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S
Package: PowerPAK® 1212-8S
Package: Reel - TR
Mounting: Surface Mount
Family Name: SISS46
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® 1212-8S
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
HTSUS: 8541.29.0095
Other Part Number: SISS46DN-T1-GE3TR, SISS46DN-T1-GE3CT, SISS46DN-T1-GE3DKR

Buy Now Datasheet
Single FETs, MOSFETs - SISS46DN-T1-GE3TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISS46DN-T1-GE3TR-ND
Single FETs, MOSFETs SISS46DN-T1-GE3TR-ND
N-Channel 100V 12.5A (Ta), 45.3A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S

N-Channel 100V 12.5A (Ta), 45.3A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S

Buy Now Datasheet
Single FETs, MOSFETs - SISS46DN-T1-GE3DKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISS46DN-T1-GE3DKR-ND
Single FETs, MOSFETs SISS46DN-T1-GE3DKR-ND
N-Channel 100V 12.5A (Ta), 45.3A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S

N-Channel 100V 12.5A (Ta), 45.3A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S

Buy Now Datasheet
Single FETs, MOSFETs - SISS46DN-T1-GE3CT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISS46DN-T1-GE3CT-ND
Single FETs, MOSFETs SISS46DN-T1-GE3CT-ND
N-Channel 100V 12.5A (Ta), 45.3A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S

N-Channel 100V 12.5A (Ta), 45.3A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S

Buy Now Datasheet
Mosfet, N-Ch, 100V, 45.3A, 150Deg C; Transistor Polarity Vishay - 99AC9592 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 100V, 45.3A, 150Deg C; Transistor Polarity Vishay
99AC9592
Mosfet, N-Ch, 100V, 45.3A, 150Deg C; Transistor Polarity Vishay 99AC9592
MOSFET, N-CH, 100V, 45.3A, 150DEG C; Transistor Polarity:N Channel; Continuous Drain Current Id:45.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0106ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.4V; Power RoHS Compliant: Yes

MOSFET, N-CH, 100V, 45.3A, 150DEG C; Transistor Polarity:N Channel; Continuous Drain Current Id:45.3A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0106ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.4V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SISS46DN-T1-GE3
MOSFET SISS46DN-T1-GE3
MOSFET 100V Vds 20V Vgs PowerPAK 1212-8S

MOSFET 100V Vds 20V Vgs PowerPAK 1212-8S

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SISS46DN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SISS46DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SISS46DN-T1-GE3
MOSFET N-CH 100V 12.5/45.3A PPAK

MOSFET N-CH 100V 12.5/45.3A PPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 933847-SISS46DN-T1-GE3 SISS46DN-T1-GE3TR-ND 99AC9592 SISS46DN-T1-GE3 SISS46DN-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SISS46DN-T1-GE3 Single FETs, MOSFETs Mosfet, N-Ch, 100V, 45.3A, 150Deg C; Transistor Polarity Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
TJ -55 to 150 C (-67 to 302 F)
Package Type SOT3; PowerPAK® 1212-8S PowerPAK® 1212-8S TO-3 PowerPAKR 1212-8S
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