MOSFET N-CH 100V 11.3A/39A PPAK
Trans MOSFET N-CH 100V 11.3A 8-Pin PowerPAK 1212 EP T/R Product overview: SISS42LDN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 11.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 11.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SISS42LDN-T1-GE3
N-Channel 100-V (D-S) MOSFET PowerPAK
N-Channel 100-V (D-S) MOSFET PowerPAK
N-Channel 100-V (D-S) MOSFET PowerPAK
N-Channel 100V 11.3A (Ta), 39A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S
N-Channel 100V 11.3A (Ta), 39A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S
N-Channel 100V 11.3A (Ta), 39A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S
Win Source Part Number: 1277672-SISS42LDN-T1
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 11.3A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs: 14.9mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2058 pF @ 50 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SISS42LDN-T1-GE3DKR,
Base Product Number: SISS42
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET, N-CH, 100V, 39A, 150DEG C, 57W; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0122ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power RoHS Compliant: Yes
MOSFET Nch 100V Vds 20V Vgs PowerPAK 1212-8S
MOSFET N-CH 100V 11.3A/39A PPAK
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | RS Components, Ltd. | DigiKey | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SISS42LDN-T1-GE3 | 278-SISS42LDN-T1-GE3 | 2567435P | SISS42LDN-T1-GE3DKR-ND | 1277672-SISS42LDN-T1-GE3 | 06AH4243 | SISS42LDN-T1-GE3 | SISS42LDN-T1-GE3 |
| Product Name | Single FETs, MOSFETs | 100V 11.3A MOSFET Transistor | MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet, N-Ch, 100V, 39A, 150Deg C, 57W; Transistor Polarity Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 100 volts | 100 volts | ||||||
| IDSS | 11300 milliamps | 39000 milliamps | ||||||
| PD | 4800 milliwatts | 57 milliwatts |
