Vishay Intertechnology, Inc. MOSFET SiSS42DN-T1-GE3

N-Channel 100 V MOSFET in a PowerPAK 1212-8S package, designed for synchronous rectification, DC/DC conversion, and motor drive applications. The device has a maximum drain-source on-state resistance of 0.0144 Ω at 10 V gate-source voltage and 0.0170 Ω at 7.5 V gate-source voltage. It features a total gate charge of 18.9 nC and a continuous drain current rating of 40.5 A at 25 °C, limited by the package. The junction-to-case thermal resistance is 1.7-2.2 °C/W, and the operating temperature range is -55 °C to +150 °C. The package is leadless, lead-free, and halogen-free.