Win Source Part Number: 1277669-SISS28DN-T1-
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.52mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 57W (Tc)
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3640 pF @ 10 V
Vgs (Max): +20V, -16V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 79 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SISS28DN-T1-GE3TR,SI
Base Product Number: SISS28
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
N-Channel 25V 60A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S
N-Channel 25V 60A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S
N-Channel 25V 60A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S
MOSFET N-Ch 25V Vds 21.8nC Qg Typ
MOSFET N-CH 25V 60A PPAK1212-8S
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1277669-SISS28DN-T1-GE3 | 742-SISS28DN-T1-GE3CT-ND | SISS28DN-T1-GE3 | SISS28DN-T1-GE3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel |
