Vishay Intertechnology, Inc. Single FETs, MOSFETs SISS26LDN-T1-BE3

The SiSS26LDN is an N-channel 60 V MOSFET for synchronous rectification, DC/DC conversion, and motor drives, packaged in the PowerPAK 1212-8S (3.30 mm × 3.30 mm). It has a maximum on-state resistance of 0.0043 Ω at V\_GS = 10 V and 0.0062 Ω at V\_GS = 4.5 V, with a typical total gate charge of 15.2 nC. Continuous drain current is 81.2 A, pulsed drain current 150 A. Junction temperature range is -55 °C to +150 °C. Junction-to-case thermal resistance is 2.2 °C/W maximum. The part is lead-free, halogen-free, and RoHS-compliant. It features TrenchFET Gen IV technology, with 100 % R\_g and UIS tested.