N-Channel 60V 60A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S
N-Channel 60V 60A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S
N-Channel 60V 60A (Tc) 57W (Tc) Surface Mount PowerPAK® 1212-8S
N-Channel MOSFET, 30V, 100A, 0.0055 Ohm Product overview: SISS26DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 100A, 0.0055 Ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 100A, 0.0055 Ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SISS26DN-T1-GE3 can be used for catalog matching and distributor lookup.
Win Source Part Number: 1118133-SISS26DN-T1-
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 57W (Tc)
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1710 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 62 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SISS26DN-T1-GE3DKR,S
Base Product Number: SISS26
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
MOSFET N-CH 60V 60A PPAK1212-8S
MOSFET 60V Vds 20V Vgs PowerPAK 1212-8S
MOSFET, N-CH, 60V, 60A, 150DEG C, 57W; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:60A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.6V RoHS Compliant: Yes
MOSFET N-CH 60V 60A PPAK1212-8S
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SISS26DN-T1-GE3CT-ND | 278-SISS26DN-T1-GE3 | 1118133-SISS26DN-T1-GE3 | SISS26DN-T1-GE3 | SISS26DN-T1-GE3 | 37AC0920 | SISS26DN-T1-GE3 |
| Product Name | Single FETs, MOSFETs | N-Channel 30V 100A 0.0055 Ohm MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 60V, 60A, 150Deg C, 57W; Channel Type Vishay | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| Package Type | PowerPAK® 1212-8S | SOT3 | PowerPAKR 1212-8S | TO-3 | PowerPAK® 1212-8S | ||
| PD | 57000 milliwatts | 57000 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
