MOSFET P-CH 20V 50A PPAK 1212-8S
Power Field-Effect Transistor, Product overview: SISS23DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SISS23DN-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 849558-SISS23DN-T1-G
Series: TrenchFET®
Features: 20 V
Package: Reel - TR
Family Name: SISS23
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SISS23DN-T1-GE3CT, SISS23DN-T1-GE3DKR, SISS23DN-T1-GE3TR
P-Channel 20V 50A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S
P-Channel 20V 50A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S
P-Channel 20V 50A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8S
MOSFET P-CH 20V 50A PPAK 1212-8S
MOSFET, P-CH, -20V, -50A, POWERPAK 1212; Transistor Polarity:P Channel; Continuous Drain Current Id:-50A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0035ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:900mV; RoHS Compliant: Yes
MOSFET, P-CH, -20V, -50A, POWERPAK 1212; Transistor Polarity:P Channel; Continuous Drain Current Id:-50A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0035ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:900mV; RoHS Compliant: Yes
MOSFET -20V Vds 8V Vgs PowerPAK 1212-8S
| ODG (Origin Data Global) | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SISS23DN-T1-GE3 | 8141314 | 8141314P | 278-SISS23DN-T1-GE3 | 849558-SISS23DN-T1-GE3 | SISS23DN-T1-GE3DKR-ND | SISS23DN-T1-GE3 | 01AC4971 | SISS23DN-T1-GE3 |
| Product Name | Single FETs, MOSFETs | MOSFETs | MOSFETs | MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SISS23DN-T1-GE3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, -20V, -50A, Powerpak 1212; Transistor Polarity Vishay | MOSFET |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 20 volts | ||||||||
| IDSS | 50000 milliamps | -50000 milliamps | |||||||
| PD | 4800 milliwatts | 57000 milliwatts |
