N-Channel 60V 25.5A (Ta), 92.5A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S
N-Channel 60V 25.5A (Ta), 92.5A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S
N-Channel 60V 25.5A (Ta), 92.5A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S
Power Field-Effect Transistor, Product overview: SISS22LDN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SISS22LDN-T1-GE3
Win Source Part Number: 1277616-SISS22LDN-T1
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 25.5A (Ta), 92.5A (Tc)
Rds On (Max) @ Id, Vgs: 3.65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 30 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 50 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SISS22LDN-T1-GE3
Base Product Number: SISS22
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET N-CH 60V 25.5A/92.5A PPAK
MOSFET, N-CH, 60V, 92.5A, 150DEG C ROHS COMPLIANT: YES
MOSFET N-CH 60V 25.5A/92.5A PPAK
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 742-SISS22LDN-T1-GE3DKR-ND | 278-SISS22LDN-T1-GE3 | 1277616-SISS22LDN-T1-GE3 | SISS22LDN-T1-GE3 | 42AH1977 | SISS22LDN-T1-GE3 |
| Product Name | Single FETs, MOSFETs | MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 60V, 92.5A, 150Deg C Rohs Compliant Vishay | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | |||
| Package Type | PowerPAK® 1212-8S | SOT3 | 56 nC @ 10 V | TO-3 | PowerPAK® 1212-8S | |
| Packing Method | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | |||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
