Win Source Part Number: 1010815-SISS10ADN-T1
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 31.7A (Ta), 109A (Tc)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 4.8W (Ta), 56.8W (Tc)
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3030 pF @ 20 V
Vgs (Max): +20V, -16V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SISS10ADN-T1-GE3TR,S
Base Product Number: SISS10
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Power Field-Effect Transistor, Product overview: SISS10ADN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SISS10ADN-T1-GE3
N-Channel 40V 31.7A (Ta), 109A (Tc) 4.8W (Ta), 56.8W (Tc) Surface Mount PowerPAK® 1212-8S
N-Channel 40V 31.7A (Ta), 109A (Tc) 4.8W (Ta), 56.8W (Tc) Surface Mount PowerPAK® 1212-8S
N-Channel 40V 31.7A (Ta), 109A (Tc) 4.8W (Ta), 56.8W (Tc) Surface Mount PowerPAK® 1212-8S
MOSFET N-CHAN 40 V POWERPAK 1212
MOSFET N-CH 40V 31.7A/109A PPAK
MOSFET N-CH 40V 31.7A/109A PPAK
MOSFET, N-CH, 40V, 109A, 150DEG C, 56.8W; Transistor Polarity:N Channel; Continuous Drain Current Id:109A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0022ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; PowerRoHS Compliant: Yes
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Utmel Electronic Limited | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1010815-SISS10ADN-T1-GE3 | 278-SISS10ADN-T1-GE3 | SISS10ADN-T1-GE3TR-ND | 880-SISS10ADN-T1-GE3 | SISS10ADN-T1-GE3 | SISS10ADN-T1-GE3 | 99AC9589 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET Transistor | Single FETs, MOSFETs | MOSFET N-CHAN 40 V POWERPAK 1212 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 40V, 109A, 150Deg C, 56.8W; Transistor Polarity Vishay |
| Polarity | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| PD | 4800 to 56800 milliwatts | 4800 milliwatts | 4800 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Package Type | SOT3 | PowerPAK® 1212-8S | PowerPAK® 1212-8S | PowerPAKR 1212-8S | TO-3 | ||
| Packing Method | Tape Reel; Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR |
