Vishay Precision Group Single FETs, MOSFETs SISS05DN-T1-GE3

Description
MOSFET P-CH 30V 29.4A/108A PPAK
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Description
MOSFET P-CH 30V 29.4A/108A PPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SISS05DN-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SISS05DN-T1-GE3
Single FETs, MOSFETs SISS05DN-T1-GE3
MOSFET P-CH 30V 29.4A/108A PPAK

MOSFET P-CH 30V 29.4A/108A PPAK

Supplier's Site Datasheet
Single FETs, MOSFETs - SISS05DN-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISS05DN-T1-GE3CT-ND
Single FETs, MOSFETs SISS05DN-T1-GE3CT-ND
P-Channel 30V 29.4A (Ta), 108A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S

P-Channel 30V 29.4A (Ta), 108A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S

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Single FETs, MOSFETs - SISS05DN-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISS05DN-T1-GE3DKR-ND
Single FETs, MOSFETs SISS05DN-T1-GE3DKR-ND
P-Channel 30V 29.4A (Ta), 108A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S

P-Channel 30V 29.4A (Ta), 108A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S

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Single FETs, MOSFETs - SISS05DN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISS05DN-T1-GE3TR-ND
Single FETs, MOSFETs SISS05DN-T1-GE3TR-ND
P-Channel 30V 29.4A (Ta), 108A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S

P-Channel 30V 29.4A (Ta), 108A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277613-SISS05DN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277613-SISS05DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277613-SISS05DN-T1-GE3
Win Source Part Number: 1277613-SISS05DN-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen IV Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 29.4A (Ta), 108A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Package / Case: PowerPAK® 1212-8S Supplier Device Package: PowerPAK® 1212-8S Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 15 V Vgs (Max): +16V, -20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 65 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SISS05DN-T1-GE3CT,SI SS05DN-T1-GE3DKR,SIS S05DN-T1-GE3TR Base Product Number: SISS05 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1277613-SISS05DN-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 29.4A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 15 V
Vgs (Max): +16V, -20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 65 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SISS05DN-T1-GE3CT,SISS05DN-T1-GE3DKR,SISS05DN-T1-GE3TR
Base Product Number: SISS05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

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Sheung Wan, Hong Kong
MOSFET P-Channel 30 V (D-S) MOSFET

MOSFET P-Channel 30 V (D-S) MOSFET

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Mosfet, P-Ch, -30V, -108A, 65.7W; Channel Type Vishay - 10AH0978 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -30V, -108A, 65.7W; Channel Type Vishay
10AH0978
Mosfet, P-Ch, -30V, -108A, 65.7W; Channel Type Vishay 10AH0978
MOSFET, P-CH, -30V, -108A, 65.7W; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:108A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.2V RoHS Compliant: Yes

MOSFET, P-CH, -30V, -108A, 65.7W; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:108A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.2V RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SISS05DN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SISS05DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SISS05DN-T1-GE3
MOSFET P-CH 30V 29.4A/108A PPAK

MOSFET P-CH 30V 29.4A/108A PPAK

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SISS05DN-T1-GE3 SISS05DN-T1-GE3CT-ND 1277613-SISS05DN-T1-GE3 SISS05DN-T1-GE3 10AH0978 SISS05DN-T1-GE3
Product Name Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFET Mosfet, P-Ch, -30V, -108A, 65.7W; Channel Type Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts
IDSS 29400 milliamps 108000 milliamps
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