MOSFET P-CH 30V 29.4A/108A PPAK
P-Channel 30V 29.4A (Ta), 108A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S
P-Channel 30V 29.4A (Ta), 108A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S
P-Channel 30V 29.4A (Ta), 108A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S
Win Source Part Number: 1277613-SISS05DN-T1-
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 29.4A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4930 pF @ 15 V
Vgs (Max): +16V, -20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 65 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SISS05DN-T1-GE3CT,SI
Base Product Number: SISS05
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET P-Channel 30 V (D-S) MOSFET
MOSFET, P-CH, -30V, -108A, 65.7W; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:108A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.2V RoHS Compliant: Yes
MOSFET P-CH 30V 29.4A/108A PPAK
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SISS05DN-T1-GE3 | SISS05DN-T1-GE3CT-ND | 1277613-SISS05DN-T1-GE3 | SISS05DN-T1-GE3 | 10AH0978 | SISS05DN-T1-GE3 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Mosfet, P-Ch, -30V, -108A, 65.7W; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 30 volts | |||||
| IDSS | 29400 milliamps | 108000 milliamps |
