Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SISS02DN-T1-GE3

Description
Win Source Part Number: 1277666-SISS02DN-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen IV Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Package / Case: PowerPAK® 1212-8S Supplier Device Package: PowerPAK® 1212-8S Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4450 pF @ 10 V Vgs (Max): +16V, -12V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 47 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SISS02DN-GE3,SISS02D N-T1-GE3TR,SISS02DN- T1-GE3CT,SISS02DN-T1 -GE3DKR Base Product Number: SISS02 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Description
Win Source Part Number: 1277666-SISS02DN-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen IV Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Package / Case: PowerPAK® 1212-8S Supplier Device Package: PowerPAK® 1212-8S Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4450 pF @ 10 V Vgs (Max): +16V, -12V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 47 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SISS02DN-GE3,SISS02D N-T1-GE3TR,SISS02DN- T1-GE3CT,SISS02DN-T1 -GE3DKR Base Product Number: SISS02 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277666-SISS02DN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277666-SISS02DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277666-SISS02DN-T1-GE3
Win Source Part Number: 1277666-SISS02DN-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen IV Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 5W (Ta), 65.7W (Tc) Package / Case: PowerPAK® 1212-8S Supplier Device Package: PowerPAK® 1212-8S Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4450 pF @ 10 V Vgs (Max): +16V, -12V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 47 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SISS02DN-GE3,SISS02D N-T1-GE3TR,SISS02DN- T1-GE3CT,SISS02DN-T1 -GE3DKR Base Product Number: SISS02 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1277666-SISS02DN-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 51A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 5W (Ta), 65.7W (Tc)
Package / Case: PowerPAK® 1212-8S
Supplier Device Package: PowerPAK® 1212-8S
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4450 pF @ 10 V
Vgs (Max): +16V, -12V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 47 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SISS02DN-GE3,SISS02DN-T1-GE3TR,SISS02DN-T1-GE3CT,SISS02DN-T1-GE3DKR
Base Product Number: SISS02
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

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Single FETs, MOSFETs - SISS02DN-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISS02DN-T1-GE3DKR-ND
Single FETs, MOSFETs SISS02DN-T1-GE3DKR-ND
N-Channel 25V 51A (Ta), 80A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S

N-Channel 25V 51A (Ta), 80A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S

Buy Now Datasheet
Single FETs, MOSFETs - SISS02DN-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISS02DN-T1-GE3CT-ND
Single FETs, MOSFETs SISS02DN-T1-GE3CT-ND
N-Channel 25V 51A (Ta), 80A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S

N-Channel 25V 51A (Ta), 80A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S

Buy Now Datasheet
Single FETs, MOSFETs - SISS02DN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISS02DN-T1-GE3TR-ND
Single FETs, MOSFETs SISS02DN-T1-GE3TR-ND
N-Channel 25V 51A (Ta), 80A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S

N-Channel 25V 51A (Ta), 80A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S

Buy Now Datasheet
Singapore
25V 51A MOSFET Transistor
278-SISS02DN-T1-GE3
25V 51A MOSFET Transistor 278-SISS02DN-T1-GE3
Trans MOSFET N-CH 25V 51A 8-Pin PowerPAK 1212 EP T/R Product overview: SISS02DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 51A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 51A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SISS02DN-T1-GE3 can be used for catalog matching and distributor lookup.

Trans MOSFET N-CH 25V 51A 8-Pin PowerPAK 1212 EP T/R Product overview: SISS02DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 51A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 51A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SISS02DN-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 25V Vds 16V Vgs PowerPAK 1212-8S

MOSFET 25V Vds 16V Vgs PowerPAK 1212-8S

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Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1277666-SISS02DN-T1-GE3 SISS02DN-T1-GE3DKR-ND 278-SISS02DN-T1-GE3 SISS02DN-T1-GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs 25V 51A MOSFET Transistor MOSFET
Polarity N-Channel N-Channel N-Channel
Package Type SOT3 PowerPAK® 1212-8S Tape and Reel
MOSFET Operating Mode Enhancement
V(BR)DSS 25 volts
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