Trans MOSFET N-CH 30V 25A 8-Pin PowerPAK 1212-SH EP T/R Product overview: SISHA10DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 25A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 25A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SISHA10DN-T1-GE3
N-Channel 30V 25A (Ta), 30A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8SH
N-Channel 30V 25A (Ta), 30A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8SH
N-Channel 30V 25A (Ta), 30A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8SH
Win Source Part Number: 1354482-SISHA10DN-T1
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 42 pct.
MSL Level: 1 (Unlimited)
Mfr: Vishay Siliconix
Series: TrenchFET® Gen IV
Package: Tape & Reel
Product Status: Active
Package / Case: PowerPAK® 1212-8SH
Supplier Device Package: PowerPAK® 1212-8SH
Base Product Number: SISHA10
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 2425 pF @ 15 V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
ECCN: EAR99
MOSFET N-CH 30V 25A/30A PPAK
MOSFET N-Channel 30 V (D-S) MOSFET
MOSFET, N-CH, 30V, 30A, POWERPAK 1212-8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:30A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.2V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SISHA10DN-T1-GE3 | SISHA10DN-T1-GE3DKR-ND | 1354482-SISHA10DN-T1-GE3 | SISHA10DN-T1-GE3 | SISHA10DN-T1-GE3 | 10AH0975 |
| Product Name | 30V 25A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 30V, 30A, Powerpak 1212-8; Channel Type Vishay |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 30 volts | |||||
| PD | 3600 milliwatts | 3600 to 39000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
