Vishay Precision Group Single FETs, MOSFETs SISHA10DN-T1-GE3

Description
N-Channel 30V 25A (Ta), 30A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8SH
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Description
N-Channel 30V 25A (Ta), 30A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8SH
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SISHA10DN-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISHA10DN-T1-GE3DKR-ND
Single FETs, MOSFETs SISHA10DN-T1-GE3DKR-ND
N-Channel 30V 25A (Ta), 30A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8SH

N-Channel 30V 25A (Ta), 30A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8SH

Buy Now Datasheet
Single FETs, MOSFETs - SISHA10DN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISHA10DN-T1-GE3TR-ND
Single FETs, MOSFETs SISHA10DN-T1-GE3TR-ND
N-Channel 30V 25A (Ta), 30A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8SH

N-Channel 30V 25A (Ta), 30A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8SH

Buy Now Datasheet
Single FETs, MOSFETs - SISHA10DN-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISHA10DN-T1-GE3CT-ND
Single FETs, MOSFETs SISHA10DN-T1-GE3CT-ND
N-Channel 30V 25A (Ta), 30A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8SH

N-Channel 30V 25A (Ta), 30A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8SH

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1354482-SISHA10DN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1354482-SISHA10DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1354482-SISHA10DN-T1-GE3
Win Source Part Number: 1354482-SISHA10DN-T1 -GE3 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 42 pct. MSL Level: 1 (Unlimited) Mfr: Vishay Siliconix Series: TrenchFET® Gen IV Package: Tape & Reel Product Status: Active Package / Case: PowerPAK® 1212-8SH Supplier Device Package: PowerPAK® 1212-8SH Base Product Number: SISHA10 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.7mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Vgs (Max): +20V, -16V Input Capacitance (Ciss) (Max) @ Vds: 2425 pF @ 15 V Power Dissipation (Max): 3.6W (Ta), 39W (Tc) Mounting Type: Surface Mount HTSUS: 8541.29.0095 ECCN: EAR99

Win Source Part Number: 1354482-SISHA10DN-T1-GE3
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Fake Threat In the Open Market: 42 pct.
MSL Level: 1 (Unlimited)
Mfr: Vishay Siliconix
Series: TrenchFET® Gen IV
Package: Tape & Reel
Product Status: Active
Package / Case: PowerPAK® 1212-8SH
Supplier Device Package: PowerPAK® 1212-8SH
Base Product Number: SISHA10
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Vgs (Max): +20V, -16V
Input Capacitance (Ciss) (Max) @ Vds: 2425 pF @ 15 V
Power Dissipation (Max): 3.6W (Ta), 39W (Tc)
Mounting Type: Surface Mount
HTSUS: 8541.29.0095
ECCN: EAR99

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SISHA10DN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SISHA10DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SISHA10DN-T1-GE3
MOSFET N-CH 30V 25A/30A PPAK

MOSFET N-CH 30V 25A/30A PPAK

Supplier's Site
Mosfet, N-Ch, 30V, 30A, Powerpak 1212-8; Channel Type Vishay - 10AH0975 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 30A, Powerpak 1212-8; Channel Type Vishay
10AH0975
Mosfet, N-Ch, 30V, 30A, Powerpak 1212-8; Channel Type Vishay 10AH0975
MOSFET, N-CH, 30V, 30A, POWERPAK 1212-8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:30A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.2V RoHS Compliant: Yes

MOSFET, N-CH, 30V, 30A, POWERPAK 1212-8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:30A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.2V RoHS Compliant: Yes

Supplier's Site Datasheet
MOSFET N-Channel 30 V (D-S) MOSFET

MOSFET N-Channel 30 V (D-S) MOSFET

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SISHA10DN-T1-GE3DKR-ND 1354482-SISHA10DN-T1-GE3 SISHA10DN-T1-GE3 10AH0975 SISHA10DN-T1-GE3
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 30V, 30A, Powerpak 1212-8; Channel Type Vishay MOSFET
Polarity N-Channel N-Channel
Package Type PowerPAK® 1212-8SH SOT3 PowerPAKR 1212-8SH TO-3
PD 3600 to 39000 milliwatts
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