N-Channel 30V 30.9A (Ta), 40A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH
N-Channel 30V 30.9A (Ta), 40A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH
N-Channel 30V 30.9A (Ta), 40A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH
N-Channel 30 V (D-S) MOSFET PowerPAK 121
N-Channel 30 V (D-S) MOSFET PowerPAK 121
N-Channel 30 V (D-S) MOSFET PowerPAK 121
Trans MOSFET N-CH 30V 30.9A 8-Pin PowerPAK 1212-SH EP T/R Product overview: SISHA04DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 30.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 30.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SISHA04DN-T1-GE3
Win Source Part Number: 1277665-SISHA04DN-T1
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 30.9A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.15mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Package / Case: PowerPAK® 1212-8SH
Supplier Device Package: PowerPAK® 1212-8SH
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3595 pF @ 15 V
Vgs (Max): +20V, -16V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 65 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SISHA04DN-T1-GE3CT,S
Base Product Number: SISHA04
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
MOSFET, N-CH, 30V, 40A, POWERPAK 1212-8; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:40A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.2V RoHS Compliant: Yes
MOSFET N-Channel 30 V (D-S) MOSFET
MOSFET N-CH 30V 30.9A/40A PPAK
| DigiKey | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SISHA04DN-T1-GE3DKR-ND | 1885123P | 1884896 | 278-SISHA04DN-T1-GE3 | 1277665-SISHA04DN-T1-GE3 | 10AH0974 | SISHA04DN-T1-GE3 | SISHA04DN-T1-GE3 |
| Product Name | Single FETs, MOSFETs | MOSFETs | MOSFETs | 30V 30.9A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet, N-Ch, 30V, 40A, Powerpak 1212-8; Channel Type Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | ||||
| Package Type | PowerPAK® 1212-8SH | PowerPAK 1212-8SH | Powerpak 1212-sh | Tape and Reel | SOT3 | TO-3 | PowerPAKR 1212-8SH | |
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||
| Number of units in IC | 1 | |||||||
| V(BR)DSS | 30 volts |
