Vishay Precision Group Single FETs, MOSFETs SISH625DN-T1-GE3

Description
P-Channel 30V 17.3A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH
Request a Quote Datasheet
Description
P-Channel 30V 17.3A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SISH625DN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISH625DN-T1-GE3TR-ND
Single FETs, MOSFETs SISH625DN-T1-GE3TR-ND
P-Channel 30V 17.3A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH

P-Channel 30V 17.3A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH

Buy Now Datasheet
Single FETs, MOSFETs - SISH625DN-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISH625DN-T1-GE3DKR-ND
Single FETs, MOSFETs SISH625DN-T1-GE3DKR-ND
P-Channel 30V 17.3A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH

P-Channel 30V 17.3A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH

Buy Now Datasheet
Single FETs, MOSFETs - SISH625DN-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISH625DN-T1-GE3CT-ND
Single FETs, MOSFETs SISH625DN-T1-GE3CT-ND
P-Channel 30V 17.3A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH

P-Channel 30V 17.3A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SISH625DN-T1-GE3 - 849557-SISH625DN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SISH625DN-T1-GE3
849557-SISH625DN-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SISH625DN-T1-GE3 849557-SISH625DN-T1-GE3
Manufacturer: Vishay Win Source Part Number: 849557-SISH625DN-T1- GE3 Series: TrenchFET® Features: 30 V Package: Reel - TR Family Name: SISH625 Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited Quantity per package: 3000 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 46 Weeks HTSUS: 8541.29.0095 Other Part Number: SISH625DN-T1-GE3DKR, SISH625DN-T1-GE3CT, SISH625DN-T1-GE3TR

Manufacturer: Vishay
Win Source Part Number: 849557-SISH625DN-T1-GE3
Series: TrenchFET®
Features: 30 V
Package: Reel - TR
Family Name: SISH625
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
HTSUS: 8541.29.0095
Other Part Number: SISH625DN-T1-GE3DKR, SISH625DN-T1-GE3CT, SISH625DN-T1-GE3TR

Buy Now Datasheet
Single FETs, MOSFETs - SISH625DN-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SISH625DN-T1-GE3
Single FETs, MOSFETs SISH625DN-T1-GE3
MOSFET P-CH 30V 17.3A/35A PPAK

MOSFET P-CH 30V 17.3A/35A PPAK

Supplier's Site Datasheet
Mosfet, P-Ch, -30V, -35A, 150Deg C, 52W; Transistor Polarity Vishay - 99AC9586 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -30V, -35A, 150Deg C, 52W; Transistor Polarity Vishay
99AC9586
Mosfet, P-Ch, -30V, -35A, 150Deg C, 52W; Transistor Polarity Vishay 99AC9586
MOSFET, P-CH, -30V, -35A, 150DEG C, 52W; Transistor Polarity:P Channel; Continuous Drain Current Id:-35A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0056ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; RoHS Compliant: Yes

MOSFET, P-CH, -30V, -35A, 150DEG C, 52W; Transistor Polarity:P Channel; Continuous Drain Current Id:-35A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0056ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; RoHS Compliant: Yes

Supplier's Site Datasheet
MOSFET -30V Vds; 20V Vgs PowerPAK 1212-8SH

MOSFET -30V Vds; 20V Vgs PowerPAK 1212-8SH

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SISH625DN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SISH625DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SISH625DN-T1-GE3
MOSFET P-CH 30V 17.3A/35A PPAK

MOSFET P-CH 30V 17.3A/35A PPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SISH625DN-T1-GE3TR-ND 849557-SISH625DN-T1-GE3 SISH625DN-T1-GE3 99AC9586 SISH625DN-T1-GE3 SISH625DN-T1-GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SISH625DN-T1-GE3 Single FETs, MOSFETs Mosfet, P-Ch, -30V, -35A, 150Deg C, 52W; Transistor Polarity Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel P-Channel; P-Channel
Package Type PowerPAK® 1212-8SH SOT3 PowerPAK® 1212-8SH TO-3 PowerPAKR 1212-8SH
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts
IDSS 17300 milliamps -35000 milliamps
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