P-Channel 30V 17.3A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH
P-Channel 30V 17.3A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH
P-Channel 30V 17.3A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH
Manufacturer: Vishay
Win Source Part Number: 849557-SISH625DN-T1-
Series: TrenchFET®
Features: 30 V
Package: Reel - TR
Family Name: SISH625
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
HTSUS: 8541.29.0095
Other Part Number: SISH625DN-T1-GE3DKR,
MOSFET P-CH 30V 17.3A/35A PPAK
MOSFET, P-CH, -30V, -35A, 150DEG C, 52W; Transistor Polarity:P Channel; Continuous Drain Current Id:-35A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0056ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; RoHS Compliant: Yes
MOSFET -30V Vds; 20V Vgs PowerPAK 1212-8SH
MOSFET P-CH 30V 17.3A/35A PPAK
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SISH625DN-T1-GE3TR-ND | 849557-SISH625DN-T1-GE3 | SISH625DN-T1-GE3 | 99AC9586 | SISH625DN-T1-GE3 | SISH625DN-T1-GE3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SISH625DN-T1-GE3 | Single FETs, MOSFETs | Mosfet, P-Ch, -30V, -35A, 150Deg C, 52W; Transistor Polarity Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | ||||
| Package Type | PowerPAK® 1212-8SH | SOT3 | PowerPAK® 1212-8SH | TO-3 | PowerPAKR 1212-8SH | |
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 30 volts | |||||
| IDSS | 17300 milliamps | -35000 milliamps |
