MOSFET P-CH 20V 22.1A/35A PPAK
P-Channel 20V 22.1A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH
P-Channel 20V 22.1A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH
P-Channel 20V 22.1A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH
N-Channel MOSFET, 30V, 10A, 15mΩ Product overview: SISH615ADN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 30V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SISH615ADN-T1-GE
Win Source Part Number: 1351623-SISH615ADN-T
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: TrenchFET® Gen III
Package: Tape & Reel
Standard Package: 3,000
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 20 V
Power Dissipation (Max): 3.7W (Ta) , 52W (Tc)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8SH
Supplier Device Package: PowerPAK® 1212-8SH
Vgs (Max): ±12V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 31 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SISH615
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 22.1A (Ta) , 35A (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 183 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5590 pF @ 10 V
MOSFET -20V Vds; 12V Vgs PowerPAK 1212-8SH
MOSFET P-CH 20V 22.1A/35A PPAK
MOSFET, P-CH, -20V, -35A, 150DEG C, 52W; Transistor Polarity:P Channel; Continuous Drain Current Id:-35A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0035ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.5V; RoHS Compliant: Yes
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SISH615ADN-T1-GE3 | SISH615ADN-T1-GE3TR-ND | 278-SISH615ADN-T1-GE3 | 1351623-SISH615ADN-T1-GE3 | SISH615ADN-T1-GE3 | SISH615ADN-T1-GE3 | 99AC9585 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | N-Channel 30V 10A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, -20V, -35A, 150Deg C, 52W; Transistor Polarity Vishay |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 20 volts | ||||||
| IDSS | 22100 milliamps | -35000 milliamps | |||||
| PD | 3700 milliwatts | 3700 to 52000 milliwatts |
