Manufacturer: Vishay
Win Source Part Number: 849926-SISH129DN-T1-
Series: TrenchFET®
Operating Temperature Range: -50°C ~ 150°C (TJ)
Features: P-Channel 30 V 14.4A (Ta), 35A (Tc) 3.8W (Ta), 52.1W (Tc) Surface Mount PowerPAK® 1212-8SH
Package: PowerPAK® 1212-8SH
Package: Reel - TR
Mounting: Surface Mount
Family Name: SISH129
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® 1212-8SH
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 83 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
HTSUS: 8541.29.0095
Other Part Number: SISH129DN-T1-GE3CT, SISH129DN-T1-GE3DKR,
P-Channel 30V 14.4A (Ta), 35A (Tc) 3.8W (Ta), 52.1W (Tc) Surface Mount PowerPAK® 1212-8SH
P-Channel 30V 14.4A (Ta), 35A (Tc) 3.8W (Ta), 52.1W (Tc) Surface Mount PowerPAK® 1212-8SH
P-Channel 30V 14.4A (Ta), 35A (Tc) 3.8W (Ta), 52.1W (Tc) Surface Mount PowerPAK® 1212-8SH
MOSFET -30V Vds 20V Vgs PowerPAK 1212-8
MOSFET, P-CH, -30V, -35A, 150DEG C; Transistor Polarity:P Channel; Continuous Drain Current Id:-35A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0095ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.8V; Power RoHS Compliant: Yes
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 849926-SISH129DN-T1-GE3 | SISH129DN-T1-GE3CT-ND | SISH129DN-T1-GE3 | 78AC6531 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SISH129DN-T1-GE3 | Single FETs, MOSFETs | MOSFET | Mosfet, P-Ch, -30V, -35A, 150Deg C; Transistor Polarity Vishay |
| Polarity | P-Channel | P-Channel |
