Vishay Precision Group Single FETs, MOSFETs SISH116DN-T1-GE3

Description
N-Channel 40V 10.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8SH
Request a Quote Datasheet
Description
N-Channel 40V 10.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8SH
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - 742-SISH116DN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SISH116DN-T1-GE3TR-ND
Single FETs, MOSFETs 742-SISH116DN-T1-GE3TR-ND
N-Channel 40V 10.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8SH

N-Channel 40V 10.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8SH

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Single FETs, MOSFETs - 742-SISH116DN-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SISH116DN-T1-GE3DKR-ND
Single FETs, MOSFETs 742-SISH116DN-T1-GE3DKR-ND
N-Channel 40V 10.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8SH

N-Channel 40V 10.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8SH

Buy Now Datasheet
Single FETs, MOSFETs - 742-SISH116DN-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SISH116DN-T1-GE3CT-ND
Single FETs, MOSFETs 742-SISH116DN-T1-GE3CT-ND
N-Channel 40V 10.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8SH

N-Channel 40V 10.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8SH

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277600-SISH116DN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277600-SISH116DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277600-SISH116DN-T1-GE3
Win Source Part Number: 1277600-SISH116DN-T1 -GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 16.4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.5W (Ta) Package / Case: PowerPAK® 1212-8SH Supplier Device Package: PowerPAK® 1212-8SH Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 67 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SISH116DN-T1-GE3CT,S ISH116DN-T1-GE3TR,SI SH116DN-T1-GE3DKR Base Product Number: SISH116 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1277600-SISH116DN-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 16.4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Package / Case: PowerPAK® 1212-8SH
Supplier Device Package: PowerPAK® 1212-8SH
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 67 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SISH116DN-T1-GE3CT,SISH116DN-T1-GE3TR,SISH116DN-T1-GE3DKR
Base Product Number: SISH116
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

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MOSFET 40V Vds 20V Vgs PowerPAK 1212-8

MOSFET 40V Vds 20V Vgs PowerPAK 1212-8

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Mosfet, N-Ch, 40V, 10.5A, 150Deg C, 1.5W; Transistor Polarity Vishay - 99AC0541 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 40V, 10.5A, 150Deg C, 1.5W; Transistor Polarity Vishay
99AC0541
Mosfet, N-Ch, 40V, 10.5A, 150Deg C, 1.5W; Transistor Polarity Vishay 99AC0541
MOSFET, N-CH, 40V, 10.5A, 150DEG C, 1.5W; Transistor Polarity:N Channel; Continuous Drain Current Id:10.5A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0065ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; RoHS Compliant: Yes

MOSFET, N-CH, 40V, 10.5A, 150DEG C, 1.5W; Transistor Polarity:N Channel; Continuous Drain Current Id:10.5A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0065ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SISH116DN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SISH116DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SISH116DN-T1-GE3
MOSFET N-CH 40V 10.5A PPAK

MOSFET N-CH 40V 10.5A PPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 742-SISH116DN-T1-GE3TR-ND 1277600-SISH116DN-T1-GE3 SISH116DN-T1-GE3 99AC0541 SISH116DN-T1-GE3
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFET Mosfet, N-Ch, 40V, 10.5A, 150Deg C, 1.5W; Transistor Polarity Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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