N-Channel 20V 14A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8SH
N-Channel 20V 14A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8SH
N-Channel 20V 14A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8SH
Win Source Part Number: 1277681-SISH108DN-T1
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET® Gen II
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 22A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Package / Case: PowerPAK® 1212-8SH
Supplier Device Package: PowerPAK® 1212-8SH
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V
Vgs (Max): ±16V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SISH108DN-T1-GE3TR,S
Base Product Number: SISH108
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Trans MOSFET N-CH 20V 14A 8-Pin PowerPAK 1212 EP T/R Product overview: SISH108DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 14A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 14A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SISH108DN-T1-GE3
MOSFET 20V Vds; 20/-16V Vgs PowerPAK 1212-8SH
MOSFET N-CH 20V 14A PPAK1212-8SH
MOSFET, N-CH, 20V, 14A, 150DEG C, 1.5W; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0041ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power RoHS Compliant: Yes
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SISH108DN-T1-GE3CT-ND | 1277681-SISH108DN-T1-GE3 | 278-SISH108DN-T1-GE3 | SISH108DN-T1-GE3 | SISH108DN-T1-GE3 | 99AC9580 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | 20V 14A MOSFET Transistor | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 20V, 14A, 150Deg C, 1.5W; Transistor Polarity Vishay |
| Polarity | N-Channel | N-Channel | N-Channel | |||
| Package Type | PowerPAK® 1212-8SH | SOT3 | Tape and Reel | PowerPAKR 1212-8SH | TO-3 | |
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 20 volts | |||||
| Transconductance | 0.0880 kS |
