Vishay Precision Group Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SISH106DN-T1-GE3

Description
Win Source Part Number: 1277598-SISH106DN-T1 -GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 19.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 1.5W (Ta) Package / Case: PowerPAK® 1212-8SH Supplier Device Package: PowerPAK® 1212-8SH Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Vgs (Max): ±12V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 78 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SISH106DN-T1-GE3TR,S ISH106DN-T1-GE3CT,SI SH106DN-T1-GE3DKR Base Product Number: SISH106 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277598-SISH106DN-T1-GE3 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SISH106DN-T1-GE3CT-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - SISH106DN-T1-GE3DKR-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - SISH106DN-T1-GE3TR-ND - DigiKey
    DigiKey
  • Mosfet, N-Ch, 20V, 12.5A, 150Deg C, 1.5W; Transistor Polarity Vishay - 99AC9579 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SISH106DN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Win Source Part Number: 1277598-SISH106DN-T1 -GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 19.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 1.5W (Ta) Package / Case: PowerPAK® 1212-8SH Supplier Device Package: PowerPAK® 1212-8SH Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Vgs (Max): ±12V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 78 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SISH106DN-T1-GE3TR,S ISH106DN-T1-GE3CT,SI SH106DN-T1-GE3DKR Base Product Number: SISH106 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277598-SISH106DN-T1-GE3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277598-SISH106DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277598-SISH106DN-T1-GE3
Win Source Part Number: 1277598-SISH106DN-T1 -GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 20 V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 19.5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 1.5W (Ta) Package / Case: PowerPAK® 1212-8SH Supplier Device Package: PowerPAK® 1212-8SH Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Vgs (Max): ±12V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 78 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SISH106DN-T1-GE3TR,S ISH106DN-T1-GE3CT,SI SH106DN-T1-GE3DKR Base Product Number: SISH106 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V

Win Source Part Number: 1277598-SISH106DN-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 19.5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Package / Case: PowerPAK® 1212-8SH
Supplier Device Package: PowerPAK® 1212-8SH
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V
Vgs (Max): ±12V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 78 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SISH106DN-T1-GE3TR,SISH106DN-T1-GE3CT,SISH106DN-T1-GE3DKR
Base Product Number: SISH106
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V

Buy Now Datasheet
Single FETs, MOSFETs - SISH106DN-T1-GE3CT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISH106DN-T1-GE3CT-ND
Single FETs, MOSFETs SISH106DN-T1-GE3CT-ND
N-Channel 20V 12.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8SH

N-Channel 20V 12.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8SH

Buy Now Datasheet
Single FETs, MOSFETs - SISH106DN-T1-GE3DKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISH106DN-T1-GE3DKR-ND
Single FETs, MOSFETs SISH106DN-T1-GE3DKR-ND
N-Channel 20V 12.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8SH

N-Channel 20V 12.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8SH

Buy Now Datasheet
Single FETs, MOSFETs - SISH106DN-T1-GE3TR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISH106DN-T1-GE3TR-ND
Single FETs, MOSFETs SISH106DN-T1-GE3TR-ND
N-Channel 20V 12.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8SH

N-Channel 20V 12.5A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8SH

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SISH106DN-T1-GE3
MOSFET SISH106DN-T1-GE3
MOSFET 20V Vds; +/-12V Vgs PowerPAK 1212-8SH

MOSFET 20V Vds; +/-12V Vgs PowerPAK 1212-8SH

Buy Now Datasheet
Mosfet, N-Ch, 20V, 12.5A, 150Deg C, 1.5W; Transistor Polarity Vishay - 99AC9579 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 20V, 12.5A, 150Deg C, 1.5W; Transistor Polarity Vishay
99AC9579
Mosfet, N-Ch, 20V, 12.5A, 150Deg C, 1.5W; Transistor Polarity Vishay 99AC9579
MOSFET, N-CH, 20V, 12.5A, 150DEG C, 1.5W; Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0051ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.5V; RoHS Compliant: Yes

MOSFET, N-CH, 20V, 12.5A, 150DEG C, 1.5W; Transistor Polarity:N Channel; Continuous Drain Current Id:12.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.0051ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.5V; RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SISH106DN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SISH106DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SISH106DN-T1-GE3
MOSFET N-CH 20V 12.5A PPAK

MOSFET N-CH 20V 12.5A PPAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1277598-SISH106DN-T1-GE3 SISH106DN-T1-GE3CT-ND SISH106DN-T1-GE3 99AC9579 SISH106DN-T1-GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs MOSFET Mosfet, N-Ch, 20V, 12.5A, 150Deg C, 1.5W; Transistor Polarity Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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