Trans MOSFET P-CH 30V 16.9A 8-Pin PowerPAK 1212-SH EP T/R Product overview: SISH101DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 16.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 16.9A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SISH101DN-T1-GE3
P-Channel 30V 16.9A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH
P-Channel 30V 16.9A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH
P-Channel 30V 16.9A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH
Manufacturer: Vishay
Win Source Part Number: 849555-SISH101DN-T1-
Series: TrenchFET®
Features: 30 V
Package: Reel - TR
Family Name: SISH101
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
HTSUS: 8541.29.0095
Other Part Number: SISH101DN-T1-GE3CT, SISH101DN-T1-GE3TR, SISH101DN-T1-GE3DKR
MOSFET P-CH 30V 16.9A/35A PPAK
MOSFET, P-CH, -30V, -35A, 150DEG C, 52W; Transistor Polarity:P Channel; Continuous Drain Current Id:-35A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0058ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; RoHS Compliant: Yes
MOSFET P-CH 30V 16.9A/35A PPAK
MOSFET -30V Vds; +/-25V Vgs PowerPAK 1212-8SH
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SISH101DN-T1-GE3 | SISH101DN-T1-GE3CT-ND | 849555-SISH101DN-T1-GE3 | SISH101DN-T1-GE3 | 99AC2828 | SISH101DN-T1-GE3 | SISH101DN-T1-GE3 |
| Product Name | 30V 16.9A MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SISH101DN-T1-GE3 | Single FETs, MOSFETs | Mosfet, P-Ch, -30V, -35A, 150Deg C, 52W; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 30 volts | 30 volts | |||||
| Transconductance | 0.0440 kS | ||||||
| PD | 52 milliwatts | 3700 milliwatts |
