Vishay Precision Group Single FETs, MOSFETs SISH101DN-T1-GE3

Description
MOSFET P-CH 30V 16.9A/35A PPAK
Request a Quote Datasheet
Description
MOSFET P-CH 30V 16.9A/35A PPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SISH101DN-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SISH101DN-T1-GE3
Single FETs, MOSFETs SISH101DN-T1-GE3
MOSFET P-CH 30V 16.9A/35A PPAK

MOSFET P-CH 30V 16.9A/35A PPAK

Supplier's Site Datasheet
Single FETs, MOSFETs - SISH101DN-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISH101DN-T1-GE3CT-ND
Single FETs, MOSFETs SISH101DN-T1-GE3CT-ND
P-Channel 30V 16.9A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH

P-Channel 30V 16.9A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH

Buy Now Datasheet
Single FETs, MOSFETs - SISH101DN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISH101DN-T1-GE3TR-ND
Single FETs, MOSFETs SISH101DN-T1-GE3TR-ND
P-Channel 30V 16.9A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH

P-Channel 30V 16.9A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH

Buy Now Datasheet
Single FETs, MOSFETs - SISH101DN-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISH101DN-T1-GE3DKR-ND
Single FETs, MOSFETs SISH101DN-T1-GE3DKR-ND
P-Channel 30V 16.9A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH

P-Channel 30V 16.9A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SISH101DN-T1-GE3 - 849555-SISH101DN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SISH101DN-T1-GE3
849555-SISH101DN-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SISH101DN-T1-GE3 849555-SISH101DN-T1-GE3
Manufacturer: Vishay Win Source Part Number: 849555-SISH101DN-T1- GE3 Series: TrenchFET® Features: 30 V Package: Reel - TR Family Name: SISH101 Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited Quantity per package: 3000 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 46 Weeks HTSUS: 8541.29.0095 Other Part Number: SISH101DN-T1-GE3CT, SISH101DN-T1-GE3TR, SISH101DN-T1-GE3DKR

Manufacturer: Vishay
Win Source Part Number: 849555-SISH101DN-T1-GE3
Series: TrenchFET®
Features: 30 V
Package: Reel - TR
Family Name: SISH101
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
HTSUS: 8541.29.0095
Other Part Number: SISH101DN-T1-GE3CT, SISH101DN-T1-GE3TR, SISH101DN-T1-GE3DKR

Buy Now Datasheet
MOSFET -30V Vds; +/-25V Vgs PowerPAK 1212-8SH

MOSFET -30V Vds; +/-25V Vgs PowerPAK 1212-8SH

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SISH101DN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SISH101DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SISH101DN-T1-GE3
MOSFET P-CH 30V 16.9A/35A PPAK

MOSFET P-CH 30V 16.9A/35A PPAK

Supplier's Site
Mosfet, P-Ch, -30V, -35A, 150Deg C, 52W; Transistor Polarity Vishay - 99AC2828 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -30V, -35A, 150Deg C, 52W; Transistor Polarity Vishay
99AC2828
Mosfet, P-Ch, -30V, -35A, 150Deg C, 52W; Transistor Polarity Vishay 99AC2828
MOSFET, P-CH, -30V, -35A, 150DEG C, 52W; Transistor Polarity:P Channel; Continuous Drain Current Id:-35A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0058ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; RoHS Compliant: Yes

MOSFET, P-CH, -30V, -35A, 150DEG C, 52W; Transistor Polarity:P Channel; Continuous Drain Current Id:-35A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0058ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SISH101DN-T1-GE3 SISH101DN-T1-GE3CT-ND 849555-SISH101DN-T1-GE3 SISH101DN-T1-GE3 SISH101DN-T1-GE3 99AC2828
Product Name Single FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SISH101DN-T1-GE3 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, P-Ch, -30V, -35A, 150Deg C, 52W; Transistor Polarity Vishay
Polarity P-Channel; P-Channel P-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts
IDSS 16900 milliamps -35000 milliamps
PD 3700 milliwatts
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