Vishay Precision Group Single FETs, MOSFETs SISH101DN-T1-GE3

Description
P-Channel 30V 16.9A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH
Request a Quote Datasheet
Description
P-Channel 30V 16.9A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SISH101DN-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISH101DN-T1-GE3CT-ND
Single FETs, MOSFETs SISH101DN-T1-GE3CT-ND
P-Channel 30V 16.9A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH

P-Channel 30V 16.9A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH

Buy Now Datasheet
Single FETs, MOSFETs - SISH101DN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISH101DN-T1-GE3TR-ND
Single FETs, MOSFETs SISH101DN-T1-GE3TR-ND
P-Channel 30V 16.9A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH

P-Channel 30V 16.9A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH

Buy Now Datasheet
Single FETs, MOSFETs - SISH101DN-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISH101DN-T1-GE3DKR-ND
Single FETs, MOSFETs SISH101DN-T1-GE3DKR-ND
P-Channel 30V 16.9A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH

P-Channel 30V 16.9A (Ta), 35A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8SH

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SISH101DN-T1-GE3 - 849555-SISH101DN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SISH101DN-T1-GE3
849555-SISH101DN-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SISH101DN-T1-GE3 849555-SISH101DN-T1-GE3
Manufacturer: Vishay Win Source Part Number: 849555-SISH101DN-T1- GE3 Series: TrenchFET® Features: 30 V Package: Reel - TR Family Name: SISH101 Categories: Discrete Semiconductor Products ECCN: EAR99 Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited Quantity per package: 3000 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 46 Weeks HTSUS: 8541.29.0095 Other Part Number: SISH101DN-T1-GE3CT, SISH101DN-T1-GE3TR, SISH101DN-T1-GE3DKR

Manufacturer: Vishay
Win Source Part Number: 849555-SISH101DN-T1-GE3
Series: TrenchFET®
Features: 30 V
Package: Reel - TR
Family Name: SISH101
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
HTSUS: 8541.29.0095
Other Part Number: SISH101DN-T1-GE3CT, SISH101DN-T1-GE3TR, SISH101DN-T1-GE3DKR

Buy Now Datasheet
Single FETs, MOSFETs - SISH101DN-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SISH101DN-T1-GE3
Single FETs, MOSFETs SISH101DN-T1-GE3
MOSFET P-CH 30V 16.9A/35A PPAK

MOSFET P-CH 30V 16.9A/35A PPAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SISH101DN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SISH101DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SISH101DN-T1-GE3
MOSFET P-CH 30V 16.9A/35A PPAK

MOSFET P-CH 30V 16.9A/35A PPAK

Supplier's Site
MOSFET -30V Vds; +/-25V Vgs PowerPAK 1212-8SH

MOSFET -30V Vds; +/-25V Vgs PowerPAK 1212-8SH

Buy Now Datasheet
Mosfet, P-Ch, -30V, -35A, 150Deg C, 52W; Transistor Polarity Vishay - 99AC2828 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -30V, -35A, 150Deg C, 52W; Transistor Polarity Vishay
99AC2828
Mosfet, P-Ch, -30V, -35A, 150Deg C, 52W; Transistor Polarity Vishay 99AC2828
MOSFET, P-CH, -30V, -35A, 150DEG C, 52W; Transistor Polarity:P Channel; Continuous Drain Current Id:-35A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0058ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; RoHS Compliant: Yes

MOSFET, P-CH, -30V, -35A, 150DEG C, 52W; Transistor Polarity:P Channel; Continuous Drain Current Id:-35A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0058ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.5V; RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SISH101DN-T1-GE3CT-ND 849555-SISH101DN-T1-GE3 SISH101DN-T1-GE3 SISH101DN-T1-GE3 SISH101DN-T1-GE3 99AC2828
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SISH101DN-T1-GE3 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, P-Ch, -30V, -35A, 150Deg C, 52W; Transistor Polarity Vishay
Polarity P-Channel P-Channel; P-Channel
Package Type PowerPAK® 1212-8SH SOT3 PowerPAK® 1212-8SH PowerPAKR 1212-8SH TO-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 30 volts
IDSS 16900 milliamps -35000 milliamps
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