Trans MOSFET N-CH 60V 14A 8-Pin PowerPAK 1212-SCD T/R Product overview: SISF20DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 14A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 14A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SISF20DN-T1-GE3 can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 60V 14A (Ta), 52A (Tc) 5.2W (Ta), 69.4W (Tc) Surface Mount PowerPAK® 1212-8SCD
Mosfet Array 2 N-Channel (Dual) 60V 14A (Ta), 52A (Tc) 5.2W (Ta), 69.4W (Tc) Surface Mount PowerPAK® 1212-8SCD
Mosfet Array 2 N-Channel (Dual) 60V 14A (Ta), 52A (Tc) 5.2W (Ta), 69.4W (Tc) Surface Mount PowerPAK® 1212-8SCD
Win Source Part Number: 1278497-SISF20DN-T1-
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power - Max: 5.2W (Ta), 69.4W (Tc)
Package / Case: PowerPAK® 1212-8SCD
Supplier Device Package: PowerPAK® 1212-8SCD
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 59 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SISF20DN-T1-GE3TR,SI
Base Product Number: SISF20
MOSFET, DUAL N-CH, 60V, 52A, 150DEG C; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:52A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.01ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes
MOSFET Nch 60V Vds 20V Vgs PowerPAK 1212-8SCD
MOSFET 2N-CH 60V 14A/52A PPAK 12
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SISF20DN-T1-GE3 | SISF20DN-T1-GE3TR-ND | 1278497-SISF20DN-T1-GE3 | 02AH2521 | SISF20DN-T1-GE3 | SISF20DN-T1-GE3 |
| Product Name | 60V 14A MOSFET Transistor | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | Mosfet, Dual N-Ch, 60V, 52A, 150Deg C; Transistor Polarity Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 60 volts | |||||
| PD | 69.4 milliwatts | |||||
| TJ | -55 C (-67 F) |
