Power Field-Effect Transistor, Product overview: SISF04DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SISF04DN-T1-GE3 can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) Common Drain 30V 30A (Ta), 108A (Tc) 5.2W (Ta), 69.4W (Tc) Surface Mount PowerPAK® 1212-8SCD
Mosfet Array 2 N-Channel (Dual) Common Drain 30V 30A (Ta), 108A (Tc) 5.2W (Ta), 69.4W (Tc) Surface Mount PowerPAK® 1212-8SCD
Mosfet Array 2 N-Channel (Dual) Common Drain 30V 30A (Ta), 108A (Tc) 5.2W (Ta), 69.4W (Tc) Surface Mount PowerPAK® 1212-8SCD
Win Source Part Number: 1278510-SISF04DN-T1-
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power - Max: 5.2W (Ta), 69.4W (Tc)
Package / Case: PowerPAK® 1212-8SCD
Supplier Device Package: PowerPAK® 1212-8SCD
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 15V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 64 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SISF04DN-T1-GE3T
Base Product Number: SISF04
MOSFET, DUAL N-CH, 108A, 30V, 150DEG C ROHS COMPLIANT: YES
MOSFET 2N-CH 30V 30A PPAK 1212-8
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Newark, An Avnet Company | Acme Chip Technology Co., Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SISF04DN-T1-GE3 | 742-SISF04DN-T1-GE3DKR-ND | 1278510-SISF04DN-T1-GE3 | 64AH1459 | SISF04DN-T1-GE3 |
| Product Name | MOSFET Transistor | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | Mosfet, Dual N-Ch, 108A, 30V, 150Deg C Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Package Type | PowerPAK® 1212-8SCD | SOT3 | TO-3 |
