Vishay Precision Group FET, MOSFET Arrays SISF04DN-T1-GE3

Description
Mosfet Array 2 N-Channel (Dual) Common Drain 30V 30A (Ta), 108A (Tc) 5.2W (Ta), 69.4W (Tc) Surface Mount PowerPAK® 1212-8SCD
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Description
Mosfet Array 2 N-Channel (Dual) Common Drain 30V 30A (Ta), 108A (Tc) 5.2W (Ta), 69.4W (Tc) Surface Mount PowerPAK® 1212-8SCD
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - 742-SISF04DN-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
742-SISF04DN-T1-GE3DKR-ND
FET, MOSFET Arrays 742-SISF04DN-T1-GE3DKR-ND
Mosfet Array 2 N-Channel (Dual) Common Drain 30V 30A (Ta), 108A (Tc) 5.2W (Ta), 69.4W (Tc) Surface Mount PowerPAK® 1212-8SCD

Mosfet Array 2 N-Channel (Dual) Common Drain 30V 30A (Ta), 108A (Tc) 5.2W (Ta), 69.4W (Tc) Surface Mount PowerPAK® 1212-8SCD

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FET, MOSFET Arrays - 742-SISF04DN-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
742-SISF04DN-T1-GE3CT-ND
FET, MOSFET Arrays 742-SISF04DN-T1-GE3CT-ND
Mosfet Array 2 N-Channel (Dual) Common Drain 30V 30A (Ta), 108A (Tc) 5.2W (Ta), 69.4W (Tc) Surface Mount PowerPAK® 1212-8SCD

Mosfet Array 2 N-Channel (Dual) Common Drain 30V 30A (Ta), 108A (Tc) 5.2W (Ta), 69.4W (Tc) Surface Mount PowerPAK® 1212-8SCD

Buy Now Datasheet
FET, MOSFET Arrays - 742-SISF04DN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
742-SISF04DN-T1-GE3TR-ND
FET, MOSFET Arrays 742-SISF04DN-T1-GE3TR-ND
Mosfet Array 2 N-Channel (Dual) Common Drain 30V 30A (Ta), 108A (Tc) 5.2W (Ta), 69.4W (Tc) Surface Mount PowerPAK® 1212-8SCD

Mosfet Array 2 N-Channel (Dual) Common Drain 30V 30A (Ta), 108A (Tc) 5.2W (Ta), 69.4W (Tc) Surface Mount PowerPAK® 1212-8SCD

Buy Now Datasheet
Singapore, Singapore
MOSFET Transistor
278-SISF04DN-T1-GE3
MOSFET Transistor 278-SISF04DN-T1-GE3
Power Field-Effect Transistor, Product overview: SISF04DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SISF04DN-T1-GE3 can be used for catalog matching and distributor lookup.

Power Field-Effect Transistor, Product overview: SISF04DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SISF04DN-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - 1278510-SISF04DN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
1278510-SISF04DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays 1278510-SISF04DN-T1-GE3
Win Source Part Number: 1278510-SISF04DN-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays Series: TrenchFET® Gen IV Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 108A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Power - Max: 5.2W (Ta), 69.4W (Tc) Package / Case: PowerPAK® 1212-8SCD Supplier Device Package: PowerPAK® 1212-8SCD Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 15V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 64 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: 742-SISF04DN-T1-GE3T R,742-SISF04DN-T1-GE 3CT,742-SISF04DN-T1- GE3DKR Base Product Number: SISF04

Win Source Part Number: 1278510-SISF04DN-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power - Max: 5.2W (Ta), 69.4W (Tc)
Package / Case: PowerPAK® 1212-8SCD
Supplier Device Package: PowerPAK® 1212-8SCD
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 15V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 64 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: 742-SISF04DN-T1-GE3TR,742-SISF04DN-T1-GE3CT,742-SISF04DN-T1-GE3DKR
Base Product Number: SISF04

Buy Now Datasheet
Mosfet, Dual N-Ch, 108A, 30V, 150Deg C Rohs Compliant Vishay - 64AH1459 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual N-Ch, 108A, 30V, 150Deg C Rohs Compliant Vishay
64AH1459
Mosfet, Dual N-Ch, 108A, 30V, 150Deg C Rohs Compliant Vishay 64AH1459
MOSFET, DUAL N-CH, 108A, 30V, 150DEG C ROHS COMPLIANT: YES

MOSFET, DUAL N-CH, 108A, 30V, 150DEG C ROHS COMPLIANT: YES

Supplier's Site Datasheet
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SISF04DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SISF04DN-T1-GE3
MOSFET 2N-CH 30V 30A PPAK 1212-8

MOSFET 2N-CH 30V 30A PPAK 1212-8

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Newark, An Avnet Company Acme Chip Technology Co., Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 742-SISF04DN-T1-GE3DKR-ND 278-SISF04DN-T1-GE3 1278510-SISF04DN-T1-GE3 64AH1459 SISF04DN-T1-GE3
Product Name FET, MOSFET Arrays MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays Mosfet, Dual N-Ch, 108A, 30V, 150Deg C Rohs Compliant Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type PowerPAK® 1212-8SCD SOT3 TO-3
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