Trans MOSFET N-CH 30V 60A 8-Pin PowerPAK 1212-SCD T/R Product overview: SISF00DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SISF00DN-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 895127-SISF00DN-T1-G
Series: TrenchFET® Gen IV
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: Mosfet Array 2 N-Channel (Dual) Common Drain 30V 60A (Tc) 69.4W (Tc) Surface Mount PowerPAK® 1212-8SCD
Package: PowerPAK® 1212-8SCD
Package: Reel - TR
Mounting: Surface Mount
Family Name: SISF00
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® 1212-8SCD
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SISF00DN-T1-GE3CT, SISF00DN-T1-GE3DKR, SISF00DN-T1-GE3TR
Mosfet Array 2 N-Channel (Dual) Common Drain 30V 60A (Tc) 69.4W (Tc) Surface Mount PowerPAK® 1212-8SCD
Mosfet Array 2 N-Channel (Dual) Common Drain 30V 60A (Tc) 69.4W (Tc) Surface Mount PowerPAK® 1212-8SCD
Mosfet Array 2 N-Channel (Dual) Common Drain 30V 60A (Tc) 69.4W (Tc) Surface Mount PowerPAK® 1212-8SCD
MOSFET 2N-CH 30V 60A PPAK 12
MOSFET 30V (S1-S2) Cmn Drn PowerPAK 1212-8SCD
MOSFET, DUAL N-CH, 30V, POWERPAK 1212; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0042ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V; RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SISF00DN-T1-GE3 | 895127-SISF00DN-T1-GE3 | SISF00DN-T1-GE3DKR-ND | SISF00DN-T1-GE3 | SISF00DN-T1-GE3 | 81AC2794 |
| Product Name | 30V 60A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SISF00DN-T1-GE3 | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, Dual N-Ch, 30V, Powerpak 1212; Transistor Polarity Vishay |
| Polarity | N-Channel | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | |||||
| V(BR)DSS | 30 volts | |||||
| Transconductance | 0.1300 kS | |||||
| PD | 69.4 milliwatts |
