Mosfet Array 2 N-Channel (Dual) 40V 34A (Tc) 23W Surface Mount PowerPAK® 1212-8 Dual
Mosfet Array 2 N-Channel (Dual) 40V 34A (Tc) 23W Surface Mount PowerPAK® 1212-8 Dual
Mosfet Array 2 N-Channel (Dual) 40V 34A (Tc) 23W Surface Mount PowerPAK® 1212-8 Dual
Trans MOSFET N-CH 40V 34A 8-Pin PowerPAK 1212 EP T/R Product overview: SISB46DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 34A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 34A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SISB46DN-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 40V POWERPAK 1212-8
Win Source Part Number: 1278489-SISB46DN-T1-
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 11.71mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power - Max: 23W
Package / Case: PowerPAK® 1212-8 Dual
Supplier Device Package: PowerPAK® 1212-8 Dual
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 81 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SISB46DN-T1-GE3CT,SI
Base Product Number: SISB46
MOSFET 2N-CH 40V 34A PPAK 1212
MOSFET 40V Vds 20V Vgs PowerPAK 1212-8
MOSFET, N-CH, 40V, 34A, 150DEG C, 23W ROHS COMPLIANT: YES
| DigiKey | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SISB46DN-T1-GE3DKR-ND | 278-SISB46DN-T1-GE3 | SISB46DN-T1-GE3 | 1278489-SISB46DN-T1-GE3 | SISB46DN-T1-GE3 | SISB46DN-T1-GE3 | 75AH9198 |
| Product Name | FET, MOSFET Arrays | 40V 34A MOSFET Transistor | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 40V, 34A, 150Deg C, 23W Rohs Compliant Vishay |
| Package Type | PowerPAK® 1212-8 Dual | Tape and Reel | PowerPAK® 1212-8 Dual | SOT3 | TO-3 | ||
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | ||||
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 40 volts | 40 volts | |||||
| Transconductance | 0.0520 kS |
