MOSFET 2N-CH 40V POWERPAK 1212-8
Mosfet Array 2 N-Channel (Dual) 40V 34A (Tc) 23W Surface Mount PowerPAK® 1212-8 Dual
Mosfet Array 2 N-Channel (Dual) 40V 34A (Tc) 23W Surface Mount PowerPAK® 1212-8 Dual
Mosfet Array 2 N-Channel (Dual) 40V 34A (Tc) 23W Surface Mount PowerPAK® 1212-8 Dual
Win Source Part Number: 1278489-SISB46DN-T1-
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET®
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 11.71mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power - Max: 23W
Package / Case: PowerPAK® 1212-8 Dual
Supplier Device Package: PowerPAK® 1212-8 Dual
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 81 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SISB46DN-T1-GE3CT,SI
Base Product Number: SISB46
MOSFET 40V Vds 20V Vgs PowerPAK 1212-8
MOSFET 2N-CH 40V 34A PPAK 1212
MOSFET, N-CH, 40V, 34A, 150DEG C, 23W ROHS COMPLIANT: YES
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SISB46DN-T1-GE3 | SISB46DN-T1-GE3DKR-ND | 1278489-SISB46DN-T1-GE3 | SISB46DN-T1-GE3 | SISB46DN-T1-GE3 | 75AH9198 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 40V, 34A, 150Deg C, 23W Rohs Compliant Vishay |
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 40 volts | |||||
| IDSS | 34000 milliamps |
