MOSFET N-CH 30V 16.2A/40.5A PPAK
Power Field-Effect Transistor, Product overview: SISA88DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SISA88DN-T1-GE3 can be used for catalog matching and distributor lookup.
N-Channel 30V 16.2A (Ta), 40.5A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 30V 16.2A (Ta), 40.5A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 30V 16.2A (Ta), 40.5A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8
Manufacturer: Vishay Siliconix
Win Source Part Number: 811132-SISA88DN-T1-G
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: PowerPAK 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: PowerPAK 1212-8
Power Dissipation (Maximum): 3.2W , 19.8W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 6.7mOhm at 10A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 25.5nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 985pF at 15V
Current - Continuous Drain (Id) at 25°C: 16.2A , 40.5A (Tc)
Vgs(th) (Maximum) at Id: 2.4V at 250μA
Maximum Vgs: +20V, -16V
MOSFET N-CH 30V 16.2A/40.5A PPAK
MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
MOSFET, N-CH, 30V, 40.5A, 150DEG C; Transistor Polarity:N Channel; Continuous Drain Current Id:40.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0054ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; Power RoHS Compliant: Yes
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SISA88DN-T1-GE3 | 278-SISA88DN-T1-GE3 | SISA88DN-T1-GE3TR-ND | 811132-SISA88DN-T1-GE3 | SISA88DN-T1-GE3 | SISA88DN-T1-GE3 | 81AC2792 |
| Product Name | Single FETs, MOSFETs | MOSFET Transistor | Single FETs, MOSFETs | FETs - Single - SISA88DN-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 30V, 40.5A, 150Deg C; Transistor Polarity Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 30 volts | ||||||
| IDSS | 16200 milliamps | 40500 milliamps | |||||
| PD | 3200 milliwatts | 3200 to 19800 milliwatts |
