Vishay Intertechnology, Inc. Single FETs, MOSFETs SISA84DN-T1-GE3

N-Channel 30 V MOSFET in a PowerPAK 1212-8 leadless package, designed for high-power density DC/DC conversion, motor drive control, and battery management. The device has a maximum on-state resistance of 0.0046 Ω at 10 V gate voltage and 0.0074 Ω at 4.5 V gate voltage, with a continuous drain current of 56.5 A at 25 °C and 20.5 A at 150 °C junction temperature. It is 100% Rg and UIS tested, with a junction-to-case thermal resistance of 3.8 °C/W and operates from -55 °C to +150 °C. The part meets RoHS standards and is halogen-free.