Vishay Precision Group Single FETs, MOSFETs SISA72ADN-T1-GE3

Description
MOSFET N-CH 40V 25.4A/94A PPAK
Request a Quote Datasheet
Description
MOSFET N-CH 40V 25.4A/94A PPAK
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SISA72ADN-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SISA72ADN-T1-GE3
Single FETs, MOSFETs SISA72ADN-T1-GE3
MOSFET N-CH 40V 25.4A/94A PPAK

MOSFET N-CH 40V 25.4A/94A PPAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1338142-SISA72ADN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1338142-SISA72ADN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1338142-SISA72ADN-T1-GE3
Win Source Part Number: 1338142-SISA72ADN-T1 -GE3 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: TrenchFET® Gen IV Package: Tape & Reel Standard Package: 3,000 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 40 V Power Dissipation (Max): 3.7W (Ta) , 52W (Tc) Mounting Type: Surface Mount Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Vgs (Max): +20V, -16V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 44 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Base Product Number: SISA72 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Current - Continuous Drain (Id) @ 25°C: 25.4A (Ta) , 94A (Tc) Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 20 V

Win Source Part Number: 1338142-SISA72ADN-T1-GE3
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Power Dissipation (Max): 3.7W (Ta) , 52W (Tc)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Vgs (Max): +20V, -16V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 44 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Base Product Number: SISA72
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 25.4A (Ta) , 94A (Tc)
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 20 V

Buy Now Datasheet
Single FETs, MOSFETs - SISA72ADN-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISA72ADN-T1-GE3CT-ND
Single FETs, MOSFETs SISA72ADN-T1-GE3CT-ND
N-Channel 40V 25.4A (Ta), 94A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 40V 25.4A (Ta), 94A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SISA72ADN-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISA72ADN-T1-GE3DKR-ND
Single FETs, MOSFETs SISA72ADN-T1-GE3DKR-ND
N-Channel 40V 25.4A (Ta), 94A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 40V 25.4A (Ta), 94A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SISA72ADN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISA72ADN-T1-GE3TR-ND
Single FETs, MOSFETs SISA72ADN-T1-GE3TR-ND
N-Channel 40V 25.4A (Ta), 94A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 40V 25.4A (Ta), 94A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Mosfet, N-Ch, 40V, 94A, 150Deg C, 52W; Transistor Polarity Vishay - 99AC9578 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 40V, 94A, 150Deg C, 52W; Transistor Polarity Vishay
99AC9578
Mosfet, N-Ch, 40V, 94A, 150Deg C, 52W; Transistor Polarity Vishay 99AC9578
MOSFET, N-CH, 40V, 94A, 150DEG C, 52W; Transistor Polarity:N Channel; Continuous Drain Current Id:94A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00271ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; Power RoHS Compliant: Yes

MOSFET, N-CH, 40V, 94A, 150DEG C, 52W; Transistor Polarity:N Channel; Continuous Drain Current Id:94A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.00271ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.4V; Power RoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SISA72ADN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SISA72ADN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SISA72ADN-T1-GE3
MOSFET N-CH 40V 25.4A/94A PPAK

MOSFET N-CH 40V 25.4A/94A PPAK

Supplier's Site
MOSFET 40V Vds; 20/-16V Vgs PowerPAK 1212-8

MOSFET 40V Vds; 20/-16V Vgs PowerPAK 1212-8

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number SISA72ADN-T1-GE3 1338142-SISA72ADN-T1-GE3 SISA72ADN-T1-GE3CT-ND 99AC9578 SISA72ADN-T1-GE3 SISA72ADN-T1-GE3
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Single FETs, MOSFETs Mosfet, N-Ch, 40V, 94A, 150Deg C, 52W; Transistor Polarity Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 40 volts
IDSS 25400 milliamps 94000 milliamps
PD 3700 milliwatts 3700 to 52000 milliwatts
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