Vishay Intertechnology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SISA34DN-T1-GE3

Description
Win Source Part Number: 1277611-SISA34DN-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen IV Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 20.8W (Tc) Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V Vgs (Max): +20V, -16V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 65 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SISA34DN-T1-GE3CT,SI SA34DN-T1-GE3TR,SISA 34DN-T1-GE3DKR Base Product Number: SISA34 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Description
Win Source Part Number: 1277611-SISA34DN-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen IV Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 20.8W (Tc) Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V Vgs (Max): +20V, -16V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 65 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SISA34DN-T1-GE3CT,SI SA34DN-T1-GE3TR,SISA 34DN-T1-GE3DKR Base Product Number: SISA34 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277611-SISA34DN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277611-SISA34DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277611-SISA34DN-T1-GE3
Win Source Part Number: 1277611-SISA34DN-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen IV Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Power Dissipation (Max): 20.8W (Tc) Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V Vgs (Max): +20V, -16V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 65 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SISA34DN-T1-GE3CT,SI SA34DN-T1-GE3TR,SISA 34DN-T1-GE3DKR Base Product Number: SISA34 Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1277611-SISA34DN-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 20.8W (Tc)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 15 V
Vgs (Max): +20V, -16V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 65 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SISA34DN-T1-GE3CT,SISA34DN-T1-GE3TR,SISA34DN-T1-GE3DKR
Base Product Number: SISA34
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Singapore, Singapore
30V 40A MOSFET Transistor
278-SISA34DN-T1-GE3
30V 40A MOSFET Transistor 278-SISA34DN-T1-GE3
MOSFET N-CH 30V 40A PPAK1212-8 Product overview: SISA34DN-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SISA34DN-T1-GE3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 40A PPAK1212-8 Product overview: SISA34DN-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SISA34DN-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SISA34DN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISA34DN-T1-GE3TR-ND
Single FETs, MOSFETs SISA34DN-T1-GE3TR-ND
N-Channel 30V 40A (Tc) 20.8W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 30V 40A (Tc) 20.8W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SISA34DN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SISA34DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SISA34DN-T1-GE3
MOSFET N-CH 30V 40A PPAK1212-8

MOSFET N-CH 30V 40A PPAK1212-8

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1277611-SISA34DN-T1-GE3 278-SISA34DN-T1-GE3 SISA34DN-T1-GE3TR-ND SISA34DN-T1-GE3
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 30V 40A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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