Vishay Intertechnology, Inc. MOSFET SiSA26DN-T1-GE3

N-channel 25 V MOSFET in a PowerPAK 1212-8 leadless package, optimized for synchronous buck converters and load switching. The device has a maximum drain-source on-state resistance of 0.00265 Ω at 10 V gate-source voltage and 0.00390 Ω at 4.5 V, with a continuous drain current rating of 60 A limited by the package. It features a total gate charge of 13.2 nC, a single pulse avalanche energy of 31.2 mJ, and supports an operating junction and storage temperature range from -55 °C to +150 °C. The part is lead-free, halogen-free, and meets RoHS standards.