Vishay Precision Group Single FETs, MOSFETs SISA24DN-T1-GE3

Description
MOSFET N-CH 25V 60A PPAK1212-8
Request a Quote Datasheet
Description
MOSFET N-CH 25V 60A PPAK1212-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SISA24DN-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SISA24DN-T1-GE3
Single FETs, MOSFETs SISA24DN-T1-GE3
MOSFET N-CH 25V 60A PPAK1212-8

MOSFET N-CH 25V 60A PPAK1212-8

Supplier's Site Datasheet
Single FETs, MOSFETs - SISA24DN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISA24DN-T1-GE3TR-ND
Single FETs, MOSFETs SISA24DN-T1-GE3TR-ND
N-Channel 25V 60A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 25V 60A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SISA24DN-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISA24DN-T1-GE3CT-ND
Single FETs, MOSFETs SISA24DN-T1-GE3CT-ND
N-Channel 25V 60A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 25V 60A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SISA24DN-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SISA24DN-T1-GE3DKR-ND
Single FETs, MOSFETs SISA24DN-T1-GE3DKR-ND
N-Channel 25V 60A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 25V 60A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1277661-SISA24DN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1277661-SISA24DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1277661-SISA24DN-T1-GE3
Win Source Part Number: 1277661-SISA24DN-T1- GE3 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: TrenchFET® Gen IV Package: Tape & Reel Standard Package: 3,000 Mounting: SMD (SMT) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 25 V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 52W (Tc) Package / Case: PowerPAK® 1212-8 Supplier Device Package: PowerPAK® 1212-8 Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 10 V Vgs (Max): +20V, -16V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 61 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.29.0095 Mfr: Vishay Siliconix Other Names: SISA24DN-T1-GE3CT,SI SA24DN-T1-GE3TR,SISA 24DN-T1-GE3DKR Base Product Number: SISA24 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Win Source Part Number: 1277661-SISA24DN-T1-GE3
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 52W (Tc)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 10 V
Vgs (Max): +20V, -16V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 61 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SISA24DN-T1-GE3CT,SISA24DN-T1-GE3TR,SISA24DN-T1-GE3DKR
Base Product Number: SISA24
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SISA24DN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SISA24DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SISA24DN-T1-GE3
MOSFET N-CH 25V 60A PPAK1212-8

MOSFET N-CH 25V 60A PPAK1212-8

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 25V Vds 60A Id 17.2nC Qg Typ.

MOSFET 25V Vds 60A Id 17.2nC Qg Typ.

Buy Now Datasheet
Mosfet, N-Ch, 25V, 60A, Powerpak 1212; Transistor Polarity Vishay - 10AC9116 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 25V, 60A, Powerpak 1212; Transistor Polarity Vishay
10AC9116
Mosfet, N-Ch, 25V, 60A, Powerpak 1212; Transistor Polarity Vishay 10AC9116
MOSFET, N-CH, 25V, 60A, POWERPAK 1212; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.00115ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V; Power RoHS Compliant: Yes

MOSFET, N-CH, 25V, 60A, POWERPAK 1212; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.00115ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V; Power RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SISA24DN-T1-GE3 SISA24DN-T1-GE3TR-ND 1277661-SISA24DN-T1-GE3 SISA24DN-T1-GE3 SISA24DN-T1-GE3 10AC9116
Product Name Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 25V, 60A, Powerpak 1212; Transistor Polarity Vishay
Polarity N-Channel; N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 25 volts
IDSS 60000 milliamps 60000 milliamps
PD 52000 milliwatts
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