MOSFET N-CH 25V 60A PPAK1212-8
Win Source Part Number: 1277661-SISA24DN-T1-
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET® Gen IV
Package: Tape & Reel
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 52W (Tc)
Package / Case: PowerPAK® 1212-8
Supplier Device Package: PowerPAK® 1212-8
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 10 V
Vgs (Max): +20V, -16V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 61 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.29.0095
Mfr: Vishay Siliconix
Other Names: SISA24DN-T1-GE3CT,SI
Base Product Number: SISA24
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Trans MOSFET N-CH 25V 60A 8-Pin PowerPAK 1212 EP T/R Product overview: SISA24DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 25V, 60A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 25V, 60A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SISA24DN-T1-GE3 can be used for catalog matching and distributor lookup.
N-Channel 25V 60A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 25V 60A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 25V 60A (Tc) 52W (Tc) Surface Mount PowerPAK® 1212-8
MOSFET 25V Vds 60A Id 17.2nC Qg Typ.
MOSFET N-CH 25V 60A PPAK1212-8
MOSFET, N-CH, 25V, 60A, POWERPAK 1212; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.00115ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V; Power RoHS Compliant: Yes
| ODG (Origin Data Global) | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SISA24DN-T1-GE3 | 1277661-SISA24DN-T1-GE3 | 278-SISA24DN-T1-GE3 | SISA24DN-T1-GE3TR-ND | SISA24DN-T1-GE3 | SISA24DN-T1-GE3 | 10AC9116 |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | 25V 60A MOSFET Transistor | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 25V, 60A, Powerpak 1212; Transistor Polarity Vishay |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 25 volts | 25 volts | |||||
| IDSS | 60000 milliamps | 60000 milliamps | |||||
| PD | 52000 milliwatts | 52 milliwatts |
