Vishay Intertechnology, Inc. 30V 38.3A MOSFET Transistor SISA18DN-T1-GE3

MOSFET N-CH 30V 38.3A PPAK1212-8 Product overview: SISA18DN-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 38.3A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 38.3A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SISA18DN-T1-GE3 can be used for catalog matching and distributor lookup.

N-Channel 30V 38.3A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8

Manufacturer: Vishay Siliconix
Win Source Part Number: 805386-SISA18DN-T1-GE3
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 30V
Supplier Device Package: PowerPAK 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: PowerPAK 1212-8
Power Dissipation (Maximum): 3.2W , 19.8W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 85 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 7.5mOhm at 10A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 21.5nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 1000pF at 15V
Current - Continuous Drain (Id) at 25°C: 38.3A (Tc)
Vgs(th) (Maximum) at Id: 2.4V at 250μA
Maximum Vgs: +20V, -16V