Power Field-Effect Transistor, 38.3A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Product overview: SISA18ADN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 38.3A, 30V, 0.0075ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 38.3A, 30V, 0.0075ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SISA18ADN-T1-GE3
Manufacturer: Vishay
Win Source Part Number: 1096506-SISA18ADN-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.2W (Ta), 19.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 38.3A (Tc)
Gate-Source Threshold Voltage: 2.4V @ 250μA
Max Gate Charge: 21.5nC @ 10V
Max Input Capacitance: 1000pF @ 15V
Maximum Gate-Source Voltage: +20V, -16V
Maximum Rds On at Id,Vgs: 7.5 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): DMG7430LFG-7; MDV1526URH; RJK03E2DNS-00#J5;
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
N-Channel 30V 38.3A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 30V 38.3A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 30V 38.3A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8
MOSFET N-CH 30V 38.3A PPAK1212-8
MOSFET N-CH 30V 38.3A PPAK1212-8
MOSFET, N-CH, 30V, 38.3A, POWERPAK 1212; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:38.3A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.4V RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SISA18ADN-T1-GE3 | 1096506-SISA18ADN-T1-GE3 | SISA18ADN-T1-GE3TR-ND | SISA18ADN-T1-GE3 | SISA18ADN-T1-GE3 | 19X1956 |
| Product Name | N-Channel 38.3A 30V 0.0075ohm MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SISA18ADN-T1-GE3 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 30V, 38.3A, Powerpak 1212; Channel Type Vishay |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | ||
| PD | 19800 milliwatts | 3200 to 19800 milliwatts | 3200 milliwatts | |||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| V(BR)DSS | 30 volts | 30 volts |
