N-Channel 30V 20A (Tc) 3.57W (Ta), 26.5W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 30V 20A (Tc) 3.57W (Ta), 26.5W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 30V 20A (Tc) 3.57W (Ta), 26.5W (Tc) Surface Mount PowerPAK® 1212-8
Manufacturer: Vishay
Win Source Part Number: 028777-SISA14DN-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.57W (Ta), 26.5W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 1450pF @ 15V
Maximum Gate-Source Voltage: +20V, -16V
Maximum Rds On at Id,Vgs: 5.1 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
MOSFET N-CH 30V 20A PPAK1212-8
MOSFET 30V Vds 20V Vgs PowerPAK 1212-8
MOSFET N-CH 30V 20A PPAK1212-8
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SISA14DN-T1-GE3DKR-ND | 028777-SISA14DN-T1-GE3 | SISA14DN-T1-GE3 | SISA14DN-T1-GE3 | SISA14DN-T1-GE3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SISA14DN-T1-GE3 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel; N-Channel | ||
| Package Type | PowerPAK® 1212-8 | SOT3; PowerPAK 1212-8 | PowerPAK® 1212-8 | Surface Mount | |
| V(BR)DSS | 30 volts | 30 volts | |||
| PD | 3570 to 26500 milliwatts | 3570 milliwatts |
