Power Field-Effect Transistor, Product overview: SISA01DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SISA01DN-T1-GE3
P-Channel 30V 22.4A (Ta), 60A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 30V 22.4A (Ta), 60A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
P-Channel 30V 22.4A (Ta), 60A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Manufacturer: Vishay
Win Source Part Number: 849554-SISA01DN-T1-G
Series: TrenchFET® Gen IV
Features: 30 V
Package: Reel - TR
Family Name: SISA01
Categories: Discrete Semiconductor Products
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 74 pct.
Supply and Demand Status: Limited
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
HTSUS: 8541.29.0095
Other Part Number: SISA01DN-T1-GE3DKR, SISA01DN-T1-GE3CT, SISA01DN-T1-GE3TR
MOSFET P-CH 30V 22.4A/60A PPAK
MOSFET, P-CH, -30V, -60A, POWERPAK 1212; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0041ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.2V; RoHS Compliant: Yes
MOSFET P-CH 30V 22.4A/60A PPAK
MOSFET -30V Vds 16V Vgs PowerPAK 1212-8
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-SISA01DN-T1-GE3 | SISA01DN-T1-GE3TR-ND | 849554-SISA01DN-T1-GE3 | SISA01DN-T1-GE3 | 50AC9662 | SISA01DN-T1-GE3 | SISA01DN-T1-GE3 |
| Product Name | MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SISA01DN-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P-Ch, -30V, -60A, Powerpak 1212; Transistor Polarity Vishay | Single FETs, MOSFETs | MOSFET |
| Polarity | P-Channel | P-Channel; P-Channel | |||||
| Package Type | PowerPAK® 1212-8 | SOT3 | PowerPAKR 1212-8 | TO-3 | PowerPAK® 1212-8 | ||
| Packing Method | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | ||||||
| IDSS | -60000 milliamps | 22400 milliamps | |||||
| rDS(on) | 0.0041 ohms |
