Mosfet Array 2 N-Channel (Dual) 100V 12.1A 25W Surface Mount PowerPAK® 1212-8 Dual
Mosfet Array 2 N-Channel (Dual) 100V 12.1A 25W Surface Mount PowerPAK® 1212-8 Dual
Mosfet Array 2 N-Channel (Dual) 100V 12.1A 25W Surface Mount PowerPAK® 1212-8 Dual
Manufacturer: Vishay
Win Source Part Number: 933845-SIS990DN-T1-G
Series: TrenchFET®
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: Mosfet Array 2 N-Channel (Dual) 100V 12.1A 25W Surface Mount PowerPAK® 1212-8 Dual
Package: PowerPAK® 1212-8 Dual
Package: Reel - TR
Mounting: Surface Mount
Family Name: SIS990
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® 1212-8 Dual
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SIS990DN-T1-GE3TR, SIS990DN-T1-GE3DKR, SIS990DN-T1-GE3CT
Power Field-Effect Transistor, 12.1A I(D), 100V, 0.085ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Product overview: SIS990DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 12.1A, 100V, 0.085ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12.1A, 100V, 0.085ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIS990DN-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 100V 12.1A 1212-8
MOSFET 2N-CH 100V 12.1A PPAK1212
DUAL MOSFET, N-CH, 100V, POWERPAK 1212 ROHS COMPLIANT: YES
MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SIS990DN-T1-GE3DKR-ND | 933845-SIS990DN-T1-GE3 | 278-SIS990DN-T1-GE3 | SIS990DN-T1-GE3 | SIS990DN-T1-GE3 | 57AJ0416 | SIS990DN-T1-GE3 |
| Product Name | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS990DN-T1-GE3 | N-Channel 12.1A 100V 0.085ohm MOSFET Transistor | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Dual Mosfet, N-Ch, 100V, Powerpak 1212 Rohs Compliant Vishay | MOSFET |
| Package Type | PowerPAK® 1212-8 Dual | SOT3; PowerPAK® 1212-8 Dual | PowerPAK® 1212-8 Dual | TO-3 | |||
| Polarity | N-Channel | N-Channel | N-Channel; 2 N-Channel (Dual) | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||
| PD | 25000 milliwatts |
