Vishay Intertechnology, Inc. FET, MOSFET Arrays SIS902DN-T1-GE3

Mosfet Array 2 N-Channel (Dual) 75V 4A 15.4W Surface Mount PowerPAK® 1212-8 Dual

Manufacturer: Vishay
Win Source Part Number: 144929-SIS902DN-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8 Dual
Maximum Power Dissipation: 15.4W
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 4A
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 6nC @ 10V
Max Input Capacitance: 175pF @ 38V
Maximum Rds On at Id,Vgs: 186 mOhm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited

MOSFET 2N-CH 75V 4A PPAK 1212 Product overview: SIS902DN-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 75V, 4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 75V, 4A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SIS902DN-T1-GE3 can be used for catalog matching and distributor lookup.