Vishay Intertechnology, Inc. FET, MOSFET Arrays SIS902DN-T1-GE3

Description
Mosfet Array 2 N-Channel (Dual) 75V 4A 15.4W Surface Mount PowerPAK® 1212-8 Dual
Request a Quote Datasheet
Description
Mosfet Array 2 N-Channel (Dual) 75V 4A 15.4W Surface Mount PowerPAK® 1212-8 Dual
Request a Quote Datasheet

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Product
Description
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FET, MOSFET Arrays - SIS902DN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SIS902DN-T1-GE3TR-ND
FET, MOSFET Arrays SIS902DN-T1-GE3TR-ND
Mosfet Array 2 N-Channel (Dual) 75V 4A 15.4W Surface Mount PowerPAK® 1212-8 Dual

Mosfet Array 2 N-Channel (Dual) 75V 4A 15.4W Surface Mount PowerPAK® 1212-8 Dual

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS902DN-T1-GE3 - 144929-SIS902DN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS902DN-T1-GE3
144929-SIS902DN-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS902DN-T1-GE3 144929-SIS902DN-T1-GE3
Manufacturer: Vishay Win Source Part Number: 144929-SIS902DN-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Standard Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dual Maximum Power Dissipation: 15.4W Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 4A Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 6nC @ 10V Max Input Capacitance: 175pF @ 38V Maximum Rds On at Id,Vgs: 186 mOhm @ 3A, 10V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 144929-SIS902DN-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8 Dual
Maximum Power Dissipation: 15.4W
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 4A
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 6nC @ 10V
Max Input Capacitance: 175pF @ 38V
Maximum Rds On at Id,Vgs: 186 mOhm @ 3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIS902DN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIS902DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIS902DN-T1-GE3
MOSFET 2N-CH 75V 4A PPAK 1212

MOSFET 2N-CH 75V 4A PPAK 1212

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SIS902DN-T1-GE3TR-ND 144929-SIS902DN-T1-GE3 SIS902DN-T1-GE3
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS902DN-T1-GE3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type PowerPAK® 1212-8 Dual SOT3; PowerPAK 1212-8 Dual
Polarity N-Channel
V(BR)DSS 75 volts
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