Manufacturer: Vishay
Win Source Part Number: 895119-SIS892DN-T1-G
Series: TrenchFET®
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 100 V 30A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Package: PowerPAK® 1212-8
Package: Reel - TR
Mounting: Surface Mount
Family Name: SIS892
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® 1212-8
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 89 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 51 Weeks
HTSUS: 8541.29.0095
Other Part Number: SIS892DNT1GE3, SIS892DN-T1-GE3CT, SIS892DN-T1-GE3TR, SIS892DN-T1-GE3DKR
MOSFET N-CH 100V 30A PPAK1212-8
N-Channel 100V 30A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 100V 30A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 100V 30A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
N-CH MOSFET 100V 30A 29mR PowerPAK 1212-8 Product overview: SIS892DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 30A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIS892DN-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 100V 30A PPAK1212-8
MOSFET, N CHANNEL, 100V, 30A, POWERPAK 1212-8, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:30A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:52W RoHS Compliant: Yes
MOSFET, N CHANNEL, 100V, 30A, POWERPAK 1212-8; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:30A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:52W RoHS Compliant: Yes
MOSFET 100V 30A 43W 29 mohms @ 10V
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 895119-SIS892DN-T1-GE3 | SIS892DN-T1-GE3 | SIS892DN-T1-GE3DKR-ND | 278-SIS892DN-T1-GE3 | SIS892DN-T1-GE3 | 86R3819 | SIS892DN-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS892DN-T1-GE3 | Single FETs, MOSFETs | Single FETs, MOSFETs | 100V 30A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N Channel, 100V, 30A, Powerpak 1212-8, Full Reel; Channel Type Vishay | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | ||||
| Package Type | SOT3; PowerPAK® 1212-8 | PowerPAK® 1212-8 | PowerPAK® 1212-8 | PowerPAKR 1212-8 | TO-3 | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
