Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS892ADN-T1-GE3 SIS892ADN-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 1096504-SIS892ADN-T1 -GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Family Name: SiS892ADN Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 28A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 19.5nC @ 10V Max Input Capacitance: 550pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 33 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): TPN3300ANH; TPN3300ANH,LQ; TPN3300ANH(LQ,S); BSZ440N10NS3GATMA1; Introduction Date: July 17, 2012 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management, Communications & Networking
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Description
Manufacturer: Vishay Win Source Part Number: 1096504-SIS892ADN-T1 -GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Family Name: SiS892ADN Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 28A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 19.5nC @ 10V Max Input Capacitance: 550pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 33 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): TPN3300ANH; TPN3300ANH,LQ; TPN3300ANH(LQ,S); BSZ440N10NS3GATMA1; Introduction Date: July 17, 2012 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management, Communications & Networking
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS892ADN-T1-GE3 - 1096504-SIS892ADN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS892ADN-T1-GE3
1096504-SIS892ADN-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS892ADN-T1-GE3 1096504-SIS892ADN-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1096504-SIS892ADN-T1 -GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Family Name: SiS892ADN Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 28A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 19.5nC @ 10V Max Input Capacitance: 550pF @ 50V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 33 mOhm @ 10A, 10V Alternative Parts (Cross-Reference): TPN3300ANH; TPN3300ANH,LQ; TPN3300ANH(LQ,S); BSZ440N10NS3GATMA1; Introduction Date: July 17, 2012 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2028 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Limited Application Field: Used in Industrial, Power Management, Communications & Networking

Manufacturer: Vishay
Win Source Part Number: 1096504-SIS892ADN-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Family Name: SiS892ADN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 28A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 19.5nC @ 10V
Max Input Capacitance: 550pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 33 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): TPN3300ANH; TPN3300ANH,LQ; TPN3300ANH(LQ,S); BSZ440N10NS3GATMA1;
Introduction Date: July 17, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management, Communications & Networking

Buy Now Datasheet
Singapore
100V 28A MOSFET Transistor
278-SIS892ADN-T1-GE3
100V 28A MOSFET Transistor 278-SIS892ADN-T1-GE3
N-CH Power MOSFET 100V 28A 8-Pin PowerPAK 1212 SMT Product overview: SIS892ADN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 28A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 28A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIS892ADN-T1-GE3 can be used for catalog matching and distributor lookup.

N-CH Power MOSFET 100V 28A 8-Pin PowerPAK 1212 SMT Product overview: SIS892ADN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 28A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 28A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIS892ADN-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFETs - 7879399P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7879399P
MOSFETs 7879399P
MOSFET N-Ch 100V 7.4A PowerPAK 1212-8

MOSFET N-Ch 100V 7.4A PowerPAK 1212-8

Supplier's Site
MOSFETs - 7879399 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7879399
MOSFETs 7879399
MOSFET N-Ch 100V 7.4A PowerPAK 1212-8

MOSFET N-Ch 100V 7.4A PowerPAK 1212-8

Supplier's Site
MOSFETs - 1656981 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
1656981
MOSFETs 1656981
MOSFET N-Ch 100V 7.4A PowerPAK 1212-8

MOSFET N-Ch 100V 7.4A PowerPAK 1212-8

Supplier's Site
Single FETs, MOSFETs - SIS892ADN-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIS892ADN-T1-GE3DKR-ND
Single FETs, MOSFETs SIS892ADN-T1-GE3DKR-ND
N-Channel 100V 28A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 100V 28A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SIS892ADN-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIS892ADN-T1-GE3CT-ND
Single FETs, MOSFETs SIS892ADN-T1-GE3CT-ND
N-Channel 100V 28A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 100V 28A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SIS892ADN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIS892ADN-T1-GE3TR-ND
Single FETs, MOSFETs SIS892ADN-T1-GE3TR-ND
N-Channel 100V 28A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 100V 28A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIS892ADN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIS892ADN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIS892ADN-T1-GE3
MOSFET N-CH 100V 28A PPAK1212-8

MOSFET N-CH 100V 28A PPAK1212-8

Supplier's Site
MOSFET 100V Vds 20V Vgs PowerPAK 1212-8

MOSFET 100V Vds 20V Vgs PowerPAK 1212-8

Buy Now Datasheet
Mosfet Transistor, N Channel, 28 A, 100 V, 0.027 Ohm, 10 V, 1.5 V Rohs Compliant Vishay - 63W4139 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet Transistor, N Channel, 28 A, 100 V, 0.027 Ohm, 10 V, 1.5 V Rohs Compliant Vishay
63W4139
Mosfet Transistor, N Channel, 28 A, 100 V, 0.027 Ohm, 10 V, 1.5 V Rohs Compliant Vishay 63W4139
MOSFET Transistor, N Channel, 28 A, 100 V, 0.027 ohm, 10 V, 1.5 V RoHS Compliant: Yes

MOSFET Transistor, N Channel, 28 A, 100 V, 0.027 ohm, 10 V, 1.5 V RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, N Channel, 100V, 28A, Powerpak 1212-8, Full Reel; Channel Type Vishay - 99W9583 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N Channel, 100V, 28A, Powerpak 1212-8, Full Reel; Channel Type Vishay
99W9583
Mosfet, N Channel, 100V, 28A, Powerpak 1212-8, Full Reel; Channel Type Vishay 99W9583
MOSFET, N CHANNEL, 100V, 28A, POWERPAK 1212-8, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:28A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:52W RoHS Compliant: Yes

MOSFET, N CHANNEL, 100V, 28A, POWERPAK 1212-8, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:28A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:52W RoHS Compliant: Yes

Supplier's Site
Single FETs, MOSFETs - SIS892ADN-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIS892ADN-T1-GE3
Single FETs, MOSFETs SIS892ADN-T1-GE3
MOSFET N-CH 100V 28A PPAK1212-8

MOSFET N-CH 100V 28A PPAK1212-8

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. RS Components, Ltd. RS Components, Ltd. DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company Newark, An Avnet Company ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1096504-SIS892ADN-T1-GE3 278-SIS892ADN-T1-GE3 7879399P 7879399 SIS892ADN-T1-GE3DKR-ND SIS892ADN-T1-GE3 SIS892ADN-T1-GE3 63W4139 99W9583 SIS892ADN-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS892ADN-T1-GE3 100V 28A MOSFET Transistor MOSFETs MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet Transistor, N Channel, 28 A, 100 V, 0.027 Ohm, 10 V, 1.5 V Rohs Compliant Vishay Mosfet, N Channel, 100V, 28A, Powerpak 1212-8, Full Reel; Channel Type Vishay Single FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 100 volts 100 volts 100 volts
PD 3700 to 52000 milliwatts 3700 milliwatts 52000 milliwatts 3700 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 C (-67 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; PowerPAK 1212-8 PowerPAK 1212-8 Powerpak 1212 PowerPAK® 1212-8 PowerPAKR 1212-8 TO-3 TO-3 PowerPAK® 1212-8
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