N-CH Power MOSFET 100V 28A 8-Pin PowerPAK 1212 SMT Product overview: SIS892ADN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 28A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 28A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIS892ADN-T1-GE3
Manufacturer: Vishay
Win Source Part Number: 1096504-SIS892ADN-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Family Name: SiS892ADN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 28A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 19.5nC @ 10V
Max Input Capacitance: 550pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 33 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): TPN3300ANH; TPN3300ANH,LQ; TPN3300ANH(LQ,S); BSZ440N10NS3GATMA1;
Introduction Date: July 17, 2012
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2028
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management, Communications & Networking
N-Channel 100V 28A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 100V 28A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 100V 28A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
MOSFET N-Ch 100V 7.4A PowerPAK 1212-8
MOSFET N-Ch 100V 7.4A PowerPAK 1212-8
MOSFET N-Ch 100V 7.4A PowerPAK 1212-8
MOSFET N-CH 100V 28A PPAK1212-8
MOSFET N-CH 100V 28A PPAK1212-8
MOSFET Transistor, N Channel, 28 A, 100 V, 0.027 ohm, 10 V, 1.5 V RoHS Compliant: Yes
MOSFET, N CHANNEL, 100V, 28A, POWERPAK 1212-8, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:28A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:52W RoHS Compliant: Yes
MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | RS Components, Ltd. | RS Components, Ltd. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIS892ADN-T1-GE3 | 1096504-SIS892ADN-T1-GE3 | SIS892ADN-T1-GE3DKR-ND | 7879399P | 7879399 | SIS892ADN-T1-GE3 | SIS892ADN-T1-GE3 | 63W4139 | 99W9583 | SIS892ADN-T1-GE3 |
| Product Name | 100V 28A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS892ADN-T1-GE3 | Single FETs, MOSFETs | MOSFETs | MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet Transistor, N Channel, 28 A, 100 V, 0.027 Ohm, 10 V, 1.5 V Rohs Compliant Vishay | Mosfet, N Channel, 100V, 28A, Powerpak 1212-8, Full Reel; Channel Type Vishay | MOSFET |
| MOSFET Operating Mode | Enhancement | Enhancement | ||||||||
| V(BR)DSS | 100 volts | 100 volts | 100 volts | |||||||
| PD | 3700 milliwatts | 3700 to 52000 milliwatts | 3700 milliwatts | 52000 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||||
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel |
