MOSFET N-CH 100V 30A PPAK1212-8
N-Channel 100V 30A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 100V 30A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 100V 30A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
Manufacturer: Vishay
Win Source Part Number: 116125-SIS890DN-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Family Name: SiS890DN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 30A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 802pF @ 50V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 23.5 mOhm @ 10A, 10V
Alternative Parts (Cross-Reference): STL7N10F7; STL12N10F7; RQ3P300BETB1;
Introduction Date: July 17, 2012
ECCN: EAR99
Country of Origin: China
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
MOSFET 100V Vds 20V Vgs PowerPAK 1212-8
MOSFET, N-CH, 100V, 30A, 150DEG C, 52W; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:30A; On Resistance Rds(on):0.0195ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
MOSFET Transistor, N Channel, 30 A, 100 V, 0.0195 ohm, 10 V, 1.5 V RoHS Compliant: Yes
MOSFET N-CH 100V 30A PPAK1212-8
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SIS890DN-T1-GE3 | SIS890DN-T1-GE3CT-ND | 116125-SIS890DN-T1-GE3 | SIS890DN-T1-GE3 | 70AC6484 | 63W4138 | SIS890DN-T1-GE3 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS890DN-T1-GE3 | MOSFET | Mosfet, N-Ch, 100V, 30A, 150Deg C, 52W; Transistor Polarity Vishay | Mosfet Transistor, N Channel, 30 A, 100 V, 0.0195 Ohm, 10 V, 1.5 V Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 100 volts | 100 volts | |||||
| IDSS | 30000 milliamps | 30000 milliamps | |||||
| PD | 3700 milliwatts | 3700 to 52000 milliwatts |
