Vishay Intertechnology, Inc. Single FETs, MOSFETs SIS890ADN-T1-GE3

Description
N-Channel 100V 7.6A (Ta), 24.7A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8
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Description
N-Channel 100V 7.6A (Ta), 24.7A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8
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Datasheet
Datasheet Summary
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The Vishay N-Channel MOSFET, part number 04AJ4580, features a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) rating of 24.7A. It is housed in a PowerPAK 1212-8 package and is compliant with RoHS standards. The device exhibits a low on-state resistance (R_DS(on)) of 0.0255Oc at a gate-source voltage (V_GS) of 10V and 0.0290Oc at 4.5V, making it suitable for applications requiring efficient power management. This MOSFET is designed for various applications, including synchronous rectification, DC/DC converters, motor drive switches, and circuit protection. It has a typical total gate charge (Q_g) of 8.8nC, contributing to its efficient switching performance. The device is also characterized by a maximum power dissipation of 39W at a case temperature of 25¬8C and operates within a junction temperature range of -55¬8C to +150¬8C. Engineers considering this MOSFET for their projects will find it suitable for high-performance applications where low on-resistance and efficient thermal management are critical.

Datasheet Summary
Powered by GS/AI

The Vishay N-Channel MOSFET, part number 04AJ4580, features a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) rating of 24.7A. It is housed in a PowerPAK 1212-8 package and is compliant with RoHS standards. The device exhibits a low on-state resistance (R_DS(on)) of 0.0255Oc at a gate-source voltage (V_GS) of 10V and 0.0290Oc at 4.5V, making it suitable for applications requiring efficient power management. This MOSFET is designed for various applications, including synchronous rectification, DC/DC converters, motor drive switches, and circuit protection. It has a typical total gate charge (Q_g) of 8.8nC, contributing to its efficient switching performance. The device is also characterized by a maximum power dissipation of 39W at a case temperature of 25¬8C and operates within a junction temperature range of -55¬8C to +150¬8C. Engineers considering this MOSFET for their projects will find it suitable for high-performance applications where low on-resistance and efficient thermal management are critical.

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 742-SIS890ADN-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SIS890ADN-T1-GE3CT-ND
Single FETs, MOSFETs 742-SIS890ADN-T1-GE3CT-ND
N-Channel 100V 7.6A (Ta), 24.7A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 100V 7.6A (Ta), 24.7A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - 742-SIS890ADN-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SIS890ADN-T1-GE3DKR-ND
Single FETs, MOSFETs 742-SIS890ADN-T1-GE3DKR-ND
N-Channel 100V 7.6A (Ta), 24.7A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 100V 7.6A (Ta), 24.7A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - 742-SIS890ADN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
742-SIS890ADN-T1-GE3TR-ND
Single FETs, MOSFETs 742-SIS890ADN-T1-GE3TR-ND
N-Channel 100V 7.6A (Ta), 24.7A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 100V 7.6A (Ta), 24.7A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SIS890ADN-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIS890ADN-T1-GE3
Single FETs, MOSFETs SIS890ADN-T1-GE3
MOSFET N-CH 100V 7.6A/24.7A PPAK

MOSFET N-CH 100V 7.6A/24.7A PPAK

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIS890ADN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIS890ADN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIS890ADN-T1-GE3
MOSFET N-CH 100V 7.6A/24.7A PPAK

MOSFET N-CH 100V 7.6A/24.7A PPAK

Supplier's Site
Mosfet, N-Ch, 100V, 24.7A, Powerpak 1212 Rohs Compliant Vishay - 04AJ4580 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 100V, 24.7A, Powerpak 1212 Rohs Compliant Vishay
04AJ4580
Mosfet, N-Ch, 100V, 24.7A, Powerpak 1212 Rohs Compliant Vishay 04AJ4580
MOSFET, N-CH, 100V, 24.7A, POWERPAK 1212 ROHS COMPLIANT: YES

MOSFET, N-CH, 100V, 24.7A, POWERPAK 1212 ROHS COMPLIANT: YES

Supplier's Site Datasheet

Technical Specifications

  DigiKey ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 742-SIS890ADN-T1-GE3CT-ND SIS890ADN-T1-GE3 SIS890ADN-T1-GE3 04AJ4580
Product Name Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, N-Ch, 100V, 24.7A, Powerpak 1212 Rohs Compliant Vishay
Polarity N-Channel N-Channel; N-Channel
Package Type PowerPAK® 1212-8 PowerPAK® 1212-8 Surface Mount TO-3
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 100 volts
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