Power Field-Effect Transistor, 40A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, 1212-8, POWERPAK-8 Product overview: SIS862DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40A, 60V, 0.0085ohm. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40A, 60V, 0.0085ohm, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIS862DN-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET N-CH 60V 40A PPAK1212-8
Manufacturer: Vishay Siliconix
Win Source Part Number: 810856-SIS862DN-T1-G
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60V
Supplier Device Package: PowerPAK 1212-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: PowerPAK 1212-8
Power Dissipation (Maximum): 3.7W , 52W (Tc)
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 8.5mOhm at 20A, 10V
Gate Charge (Qg) (Maximum) at Vgs: 32nC at 10V
Input Capacitance (Ciss) (Maximum) at Vds: 1320pF at 30V
Current - Continuous Drain (Id) at 25°C: 40A (Tc)
Vgs(th) (Maximum) at Id: 2.6V at 250μA
Maximum Vgs: ±20V
N-Channel 60V 40A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 60V 40A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 60V 40A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
MOSFET Transistor, N Channel, 40 A, 60 V, 0.007 ohm, 10 V RoHS Compliant: Yes
MOSFET N-CH 60V 40A PPAK1212-8
MOSFET 60V Vds 20V Vgs PowerPAK 1212-8
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIS862DN-T1-GE3 | SIS862DN-T1-GE3 | 810856-SIS862DN-T1-GE3 | SIS862DN-T1-GE3DKR-ND | 40X8692 | SIS862DN-T1-GE3 | SIS862DN-T1-GE3 |
| Product Name | N-Channel 40A 60V 0.0085ohm MOSFET Transistor | Single FETs, MOSFETs | FETs - Single - SIS862DN-T1-GE3 | Single FETs, MOSFETs | Mosfet Transistor, N Channel, 40 A, 60 V, 0.007 Ohm, 10 V Rohs Compliant Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| PD | 52000 milliwatts | 3700 milliwatts | 3700 to 52000 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
