Manufacturer: Vishay
Win Source Part Number: 895118-SIS862ADN-T1-
Series: TrenchFET® Gen IV
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 60 V 15.8A (Ta), 52A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8
Package: PowerPAK® 1212-8
Package: Reel - TR
Mounting: Surface Mount
Family Name: SIS862
Categories: Discrete Semiconductor Products
Case / Package: PowerPAK® 1212-8
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
Quantity per package: 3000
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 46 Weeks
HTSUS: 8541.29.0095
Other Part Number: SIS862ADN-T1-GE3CT, SIS862ADN-T1-GE3TR, SIS862ADN-T1-GE3DKR
N-Channel 60V 15.8A (Ta), 52A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 60V 15.8A (Ta), 52A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 60V 15.8A (Ta), 52A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 60-V (D-S) MOSFET PowerPAK 121
N-Channel 60-V (D-S) MOSFET PowerPAK 121
N-Channel 60-V (D-S) MOSFET PowerPAK 121
Trans MOSFET N-CH 60V 15.8A 8-Pin PowerPAK 1212 EP T/R Product overview: SIS862ADN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 15.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 15.8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIS862ADN-T1-GE3
MOSFET N-CH 60V 15.8A/52A PPAK
MOSFET N-CH 60V 15.8A/52A PPAK
MOSFET N-Channel 60 V (D-S) MOSFET
MOSFET, N-CH, 60V, 52A, 150DEG C, 39W; Transistor Polarity:N Channel; Continuous Drain Current Id:52A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0057ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power RoHS Compliant: Yes
| Win Source Electronics | DigiKey | RS Components, Ltd. | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 895118-SIS862ADN-T1-GE3 | SIS862ADN-T1-GE3TR-ND | 1884951 | 1884951P | 278-SIS862ADN-T1-GE3 | SIS862ADN-T1-GE3 | SIS862ADN-T1-GE3 | SIS862ADN-T1-GE3 | 10AH0984 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS862ADN-T1-GE3 | Single FETs, MOSFETs | MOSFETs | MOSFETs | 60V 15.8A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 60V, 52A, 150Deg C, 39W; Transistor Polarity Vishay |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | SOT3; PowerPAK® 1212-8 | PowerPAK® 1212-8 | Powerpak 1212 | PowerPAK 1212 | Tape and Reel | PowerPAK® 1212-8 | PowerPAKR 1212-8 | TO-3 | |
| MOSFET Operating Mode | Enhancement | Enhancement | |||||||
| Number of units in IC | 1 |