Vishay Intertechnology, Inc. Single FETs, MOSFETs SIS488DN-T1-GE3

Description
MOSFET N-CH 40V 40A PPAK1212-8
Request a Quote Datasheet
Description
MOSFET N-CH 40V 40A PPAK1212-8
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SIS488DN-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SIS488DN-T1-GE3
Single FETs, MOSFETs SIS488DN-T1-GE3
MOSFET N-CH 40V 40A PPAK1212-8

MOSFET N-CH 40V 40A PPAK1212-8

Supplier's Site Datasheet
Single FETs, MOSFETs - SIS488DN-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIS488DN-T1-GE3TR-ND
Single FETs, MOSFETs SIS488DN-T1-GE3TR-ND
N-Channel 40V 40A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 40V 40A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SIS488DN-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIS488DN-T1-GE3DKR-ND
Single FETs, MOSFETs SIS488DN-T1-GE3DKR-ND
N-Channel 40V 40A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 40V 40A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Single FETs, MOSFETs - SIS488DN-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SIS488DN-T1-GE3CT-ND
Single FETs, MOSFETs SIS488DN-T1-GE3CT-ND
N-Channel 40V 40A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

N-Channel 40V 40A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Buy Now Datasheet
Singapore
N-Channel 40V 40A MOSFET Transistor
278-SIS488DN-T1-GE3
N-Channel 40V 40A MOSFET Transistor 278-SIS488DN-T1-GE3
N-Channel MOSFET, 40V, 40A, 5.5mΩ, PowerPAK-8 Product overview: SIS488DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40V, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIS488DN-T1-GE3 can be used for catalog matching and distributor lookup.

N-Channel MOSFET, 40V, 40A, 5.5mΩ, PowerPAK-8 Product overview: SIS488DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40V, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIS488DN-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS488DN-T1-GE3 - 1096502-SIS488DN-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS488DN-T1-GE3
1096502-SIS488DN-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS488DN-T1-GE3 1096502-SIS488DN-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1096502-SIS488DN-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.7W (Ta), 52W (Tc) Family Name: SIS488DN Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PowerPAK 1212-8 Dimension: PowerPAK 1212-8 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 40A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 32nC @ 10V Max Input Capacitance: 1330pF @ 20V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.5 mOhm @ 20A, 10V Alternative Parts (Cross-Reference): BSZ042N04NSGATMA1; BSZ042N04NS G; BSZ042N04NSGXT; NVTFS5811NLTWG; Introduction Date: September 10, 2013 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 1096502-SIS488DN-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Family Name: SIS488DN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 40A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 32nC @ 10V
Max Input Capacitance: 1330pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.5 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): BSZ042N04NSGATMA1; BSZ042N04NS G; BSZ042N04NSGXT; NVTFS5811NLTWG;
Introduction Date: September 10, 2013
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET RECOMMENDED ALT 781-SIS434DN-GE3

MOSFET RECOMMENDED ALT 781-SIS434DN-GE3

Buy Now Datasheet
Mosfet, N-Ch, 40V, 40A, Powerpak 1212 Rohs Compliant Vishay - 57AJ0415 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 40V, 40A, Powerpak 1212 Rohs Compliant Vishay
57AJ0415
Mosfet, N-Ch, 40V, 40A, Powerpak 1212 Rohs Compliant Vishay 57AJ0415
MOSFET, N-CH, 40V, 40A, POWERPAK 1212 ROHS COMPLIANT: YES

MOSFET, N-CH, 40V, 40A, POWERPAK 1212 ROHS COMPLIANT: YES

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SIS488DN-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SIS488DN-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SIS488DN-T1-GE3
MOSFET N-CH 40V 40A PPAK1212-8

MOSFET N-CH 40V 40A PPAK1212-8

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SIS488DN-T1-GE3 SIS488DN-T1-GE3TR-ND 278-SIS488DN-T1-GE3 1096502-SIS488DN-T1-GE3 SIS488DN-T1-GE3 57AJ0415 SIS488DN-T1-GE3
Product Name Single FETs, MOSFETs Single FETs, MOSFETs N-Channel 40V 40A MOSFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS488DN-T1-GE3 MOSFET Mosfet, N-Ch, 40V, 40A, Powerpak 1212 Rohs Compliant Vishay Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel; N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 40 volts 40 volts
IDSS 40000 milliamps
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