N-Channel MOSFET, 40V, 40A, 5.5mΩ, PowerPAK-8 Product overview: SIS488DN-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 40V, 40A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 40A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SIS488DN-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 1096502-SIS488DN-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.7W (Ta), 52W (Tc)
Family Name: SIS488DN
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PowerPAK 1212-8
Dimension: PowerPAK 1212-8
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 40A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 32nC @ 10V
Max Input Capacitance: 1330pF @ 20V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.5 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): BSZ042N04NSGATMA1; BSZ042N04NS G; BSZ042N04NSGXT; NVTFS5811NLTWG;
Introduction Date: September 10, 2013
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
N-Channel 40V 40A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 40V 40A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
N-Channel 40V 40A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8
MOSFET N-CH 40V 40A PPAK1212-8
MOSFET N-CH 40V 40A PPAK1212-8
MOSFET, N-CH, 40V, 40A, POWERPAK 1212 ROHS COMPLIANT: YES
MOSFET RECOMMENDED ALT 781-SIS434DN-GE3
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SIS488DN-T1-GE3 | 1096502-SIS488DN-T1-GE3 | SIS488DN-T1-GE3TR-ND | SIS488DN-T1-GE3 | SIS488DN-T1-GE3 | 57AJ0415 | SIS488DN-T1-GE3 |
| Product Name | N-Channel 40V 40A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SIS488DN-T1-GE3 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 40V, 40A, Powerpak 1212 Rohs Compliant Vishay | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| PD | 52000 milliwatts | 3700 to 52000 milliwatts | 3700 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| V(BR)DSS | 40 volts | 40 volts |
